1. Product profile - MN01 triacs TEI II

Texto completo

(1)

1.

Product profile

1.1 General description

Passivated, sensitive gate triacs in a SOT54 plastic package

1.2 Features

■ Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

1.3 Applications

■ General purpose switching and phase control

1.4 Quick reference data

2.

Pinning information

Rev. 08 — 9 September 2005 Product data sheet

■ VDRM≤600 V (BT131-600) ■ IT(RMS)≤1 A

■ VDRM≤800 V (BT131-800) ■ ITSM≤12.5 A

Table 1: Pinning

Pin Description Simplified outline Symbol

1 main terminal 2 (T2)

SOT54 (TO-92)

2 gate (G)

3 main terminal 1 (T1)

1 2 3

sym051

(2)

3.

Ordering information

4.

Limiting values

Table 2: Ordering information

Type number Package

Name Description Version

BT131-600 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

BT131-800

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage

BT131-600 [1] - 600 V

BT131-800 - 800 V

IT(RMS) RMS on-state current all conduction angles;

Tlead= 51.2°C;

seeFigure 1,4and5

- 1 A

ITSM non-repetitive peak on-state

current

half sine wave; Tj= 25°C

prior to surge; seeFigure 2

and3

t = 20 ms - 12.5 A

t = 16.7 ms - 13.8 A

I2t I2t for fusing t = 10 ms - 1.28 A2s

dIT/dt rate of rise of on-state current ITM= 1.5 A; IG= 20 mA;

dIG/dt = 200 mA/µs

T2+ G+ - 50 A/µs

T2+ G− - 50 A/µs

T2− G− - 50 A/µs

T2− G+ - 10 A/µs

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.1 W

(3)

BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

a = form factor = IT(RMS)/IT(AV)

Fig 1. Total power dissipation as a function of average on-state current; maximum values

f = 50 Hz

Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values

003aab038

0 0.5 1 1.5

0 0.2 0.4 0.6 0.8 1 1.2

IT(RMS) (A)

Ptot

(W)

125 65 35

Tlead(max)

(°C)

95 30°

60° 90° 120°

α =180° α

α

003aab041

8

4 12 16

ITSM

(A)

0

n

1 10 102 103

ITSM

t IT

Tj = 25 °C max

(4)

tp≤20 ms

(1) dIT/dt limit

(2) T2− G+ quadrant

Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values

f = 50 Hz; Tlead≤51.2°C (1) Tlead= 51.2°C

003aab040

tp (s)

10−5 10−4 10−3 10−2 10−1

102

103

ITSM

(A)

10

(1)

(2)

ITSM

t IT

Tj = 25 °C max

T

003aab042

1 2 3

IT(RMS)

(A)

0

surge duration (s)

10−2 10−1 1 10

003aab039

0 0.4 0.8 1.2

−50 0 50 100 150 Tlead (°C)

IT(RMS) (A)

(5)

BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

5.

Thermal characteristics

[1] Mounted on a printed-circuit board; lead length = 4 mm

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-lead) thermal resistance from junction to

lead

full cycle - - 60 K/W

half cycle - - 80 K/W

Rth(j-a) thermal resistance from junction to

ambient

seeFigure 6 [1] - 150 - K/W

(1) half cycle (2) full cycle

Fig 6. Transient thermal impedance as a function of pulse width

003aab045

1

10−1

10 102

Zth(j-lead)

(K/W)

10−2

tp (s)

10−5 10−4 10−3 10−2 10−1 1 10

tp

PD

t

(6)

6.

Characteristics

Table 5: Characteristics Tj = 25°C unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD= 12 V; IT= 100 mA; see

Figure 8

T2+ G+ - 0.4 3 mA

T2+ G− - 1.3 3 mA

T2− G− - 1.4 3 mA

T2− G+ - 3.8 7 mA

IL latching current VD= 12 V; IGT= 100 mA; see

Figure 10

T2+ G+ - 1.2 5 mA

T2+ G− - 4 8 mA

T2− G− - 1 5 mA

T2− G+ - 2.5 8 mA

IH holding current VD= 12 V; IGT= 100 mA; see

Figure 11

- 1.3 5 mA

VT on-state voltage IT= 1.4 A; seeFigure 9 - 1.2 1.5 V

VGT gate trigger voltage IT= 10 mA; gate open circuit;

seeFigure 7

VD= 12 V; IGT= 100 mA - 0.7 1.5 V

VD= 400 V; IGT= 100 mA;

Tj= 125°C

0.2 0.3 - V

ID off-state current VD= VDRM(max); Tj= 125°C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM= 67 % VDRM(max); Tj= 125°C;

exponential waveform; RGK= 1 kΩ;

seeFigure 12

10 20 - V/µs

dVcom/dt rate of change of

commutating current

VDM= 400 V; Tj= 125°C;

dIcom/dt = 0.5 A/ms

2 - - V/µs

tgt gate-controlled

turn-on time

ITM= 1.5 A; VD= VDRM(max);

IG= 100 mA; dIG/dt = 5 A/µs

(7)

BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

(1) T2− G+ (2) T2− G− (3) T2+ G− (4) T2+ G+

Fig 7. Normalized gate trigger voltage as a function of junction temperature

Fig 8. Normalized gate trigger current as a function of junction temperature

Vo= 0.92 V

Rs= 0.4Ω.

(1) Tj= 125°C; typical values

(2) Tj= 125°C; maximum values

(3) Tj= 25°C; maximum values

Fig 9. On-state current characteristics Fig 10. Normalized latching current as a function of junction temperature

Tj (°C)

−50 0 50 100 150

003aab043

0.8 1.2 1.6

0.4 VGT(Tj)

VGT(25°C)

Tj (°C)

−50 0 50 100 150

003aab044

1 2 3

0 IGT(Tj)

IGT(25°C)

(1) (2) (3) (4)

(1) (2) (3) (4)

VT (V)

0 0.4 0.8 1.2 1.6 2

003aab037

0.8 1.2

0.4 1.6 2 IT

(A)

0

(1) (2) (3)

Tj (°C)

−50 0 50 100 150

001aab100

1 2 3

0 IL(Tj)

(8)

7.

Package information

Epoxy meets requirements of UL94 V-0 at1 8 inch.

Fig 11. Normalized holding current as a function of junction temperature

Fig 12. Rate of rise of off-state voltage as a function of junction temperature; minimum values

Tj (°C)

−50 0 50 100 150

001aab099

1 2 3

0 IH(Tj)

IH(25°C)

003aab046

Tj (°C)

0 50 100 150

102

10 103

dVD/dt

(V/µs)

(9)

BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

8.

Package outline

Fig 13. Package outline SOT54 (TO-92) UNIT A

REFERENCES OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2 5.0

b

0.48 0.40

c

0.45 0.38

D

4.8 4.4

d

1.7 1.4

E

4.2 3.6

L

14.5 12.7

e

2.54

e1

1.27

L1(1) max. 2.5

b1

0.66 0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b c

D

b1

L1 d

E

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1 e

1

2

(10)

9.

Revision history

Table 6: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BT131_SER_8 20050909 Product data sheet - - BT131_SER_7

Modifications:

The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors.

Figure 5: corrected

BT131_SER_7 20040101 Product specification - - BT131_SER_6

BT131_SER_6 20030801 Product specification - - BT131_SER_5

BT131_SER_5 20001201 Product specification - - BT131_SER_4

BT131_SER_4 20000501 Product specification - - BT131_SER_3

(11)

-BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

10. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

11. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

13. Trademarks

Notice — All referenced brands, product names, service names and

trademarks are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2] [3] Definition

I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.

(12)

15. Contents

1 Product profile . . . 1

1.1 General description. . . 1

1.2 Features . . . 1

1.3 Applications . . . 1

1.4 Quick reference data. . . 1

2 Pinning information . . . 1

3 Ordering information . . . 2

4 Limiting values. . . 2

5 Thermal characteristics. . . 5

6 Characteristics . . . 6

7 Package information . . . 8

8 Package outline . . . 9

9 Revision history . . . 10

10 Data sheet status . . . 11

11 Definitions . . . 11

12 Disclaimers . . . 11

13 Trademarks. . . 11

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APRIL 1971 - REVISED SEPTEMBER 2002

8 A RMS

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max IGT of 50 mA (Quadrants 1 - 3)

absolute maximum ratings over operating case temperature (unless otherwise noted)

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (see Note 1)

TIC226D TIC226M TIC226S TIC226N VDRM 400 600 700 800 V

Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 8 A Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 70 A

Peak gate current IGM ±1 A

Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) PGM 2.2 W Average gate power dissipation at (or below) 85°C case temperature (see Note 4) PG(AV) 0.9 W

Operating case temperature range TC -40 to +110 °C

Storage temperature range Tstg -40 to +125 °C

Lead temperature 1.6 mm from case for 10 seconds TL 230 °C

electrical characteristics at 25°C case temperature (unless otherwise noted )

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

IDRM Repetitive peak

off-state current VD = rated VDRM IG = 0 TC = 110°C ±2 mA

IGT Gate trigger current

Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V†

RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω

tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs

6 -12 -10 25 50 -50 -50 mA

VGT Gate trigger voltage

Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V†

RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω

tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs

0.7 -0.8 -0.8 0.9 2 -2 -2 2 V

VT On-state voltage IT = ±12 A IG = 50 mA (see Note 5) ±1.5 ±2.1 V

† All voltages are with respect to Main Terminal 1.

MT1

MT2

G

TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

1

2

(14)

† All voltages are with respect to Main Terminal 1.

NOTES: 5. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

the current carrying contacts are located within 3.2 mm from the device body.

6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.

IH Holding current Vsupply = +12 V† Vsupply = -12 V†

IG = 0 IG = 0

Init’ ITM = 100 mA Init’ ITM = -100 mA

10 -6

30

-30 mA

IL Latching current Vsupply = +12 V†

Vsupply = -12 V† (see Note 6)

50

-50 mA

dv/dt Critical rate of rise of

off-state voltage VDRM = Rated VDRM IG = 0 TC = 110°C ±100 V/µs

dv/dt(c)

Critical rise of

commu-tation voltage VDRM = Rated VDRM ITRM = ±12 A

TC = 85°C

(see figure 7)

±5 V/µs

thermal characteristics

PARAMETER MIN TYP MAX UNIT

RθJC Junction to case thermal resistance 1.8 °C/W

RθJA Junction to free air thermal resistance 62.5 °C/W

TYPICAL CHARACTERISTICS

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

GATE TRIGGER CURRENT

a te T ri g g e r Cu rr e n

t - m

A

100

1000 TC01AA

CASE TEMPERATURE vs

VAA = ± 12 V RL = 10

tp(g) = 20 µs Vsupply IGTM

+ + + -- +

GATE TRIGGER VOLTAGE

G a te T ri g g e r Vo lt a g e - V 1 10 TC01AB CASE TEMPERATURE vs

VAA = ± 12 V RL = 10

tp(g) = 20 µs Vsupply IGTM

+ + + -- +

(15)

APRIL 1971 - REVISED SEPTEMBER 2002

TYPICAL CHARACTERISTICS

Figure 3. Figure 4.

THERMAL INFORMATION

Figure 5. Figure 6.

HOLDING CURRENT

TC - Case Temperature - °C

-60 -40 -20 0 20 40 60 80 100 120 IH H o ld ing C u rr e nt m A 0·1 1 10 100 1000 TC01AD CASE TEMPERATURE vs Vsupply +

-VAA = ± 12 V IG = 0

Initiating ITM = 100 mA

LATCHING CURRENT

TC - Case Temperature - °C

-60 -40 -20 0 20 40 60 80 100 120 IL La tc h ing C u rr e nt - m A 1 10 100 1000 TC01AE CASE TEMPERATURE vs

VAA = ± 12 V Vsupply IGTM

+ + + -- +

MAX RMS ON-STATE CURRENT

TC - Case Temperature - °C

0 25 50 75 100 125

IT(R

M S ) - M a x im u m O n -S ta te Cu rre n

t - A

0 1 2 3 4 5 6 7 8 9 10 TI01AB CASE TEMPERATURE vs

MAX AVERAGE POWER DISSIPATED

IT(RMS) - RMS On-State Current - A

0 2 4 6 8 10 12 14 16

P(a v ) M axi mu m A v er a g e P o w e r D iss ip at e d W 0 4 8 12 16 20 24 28 32 TI01AC

RMS ON-STATE CURRENT vs

Conduction Angle = 360 ° Above 8 A rms

TJ = 110 °C

(16)

PARAMETER MEASUREMENT INFORMATION

Figure 7.

VAC

VMT2 IMT2

DUT

See Note A RG

C1

R1

IG

VAC

IMT2

VMT2

IG

ITRM

dv/dt 10%

63% L1

VDRM

50 Hz

PMC2AA NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed

(17)

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated, sensitive gate triacs in a SYMBOL PARAMETER MAX. MAX. UNIT

plastic envelope, intended for use in

general purpose bidirectional switching BT137- 600E 800E

and phase control applications, where VDRM Repetitive peak off-state 600 800 V

high sensitivity is required in all four voltages

quadrants. IT(RMS) RMS on-state current 8 8 A

ITSM Non-repetitive peak on-state 65 65 A

current

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1 main terminal 1

2 main terminal 2

3 gate

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-600 -800

VDRM Repetitive peak off-state - 600

1

800 V

voltages

IT(RMS) RMS on-state current full sine wave; Tmb≤ 102 ˚C - 8 A

ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to

on-state current surge

t = 20 ms - 65 A

t = 16.7 ms - 71 A

I2

t I2

t for fusing t = 10 ms - 21 A2

s dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs

triggering T2+ G+ - 50 A/µs

T2+ G- - 50 A/µs

T2- G- - 50 A/µs

T2- G+ - 10 A/µs

IGM Peak gate current - 2 A

VGM Peak gate voltage - 5 V

PGM Peak gate power - 5 W

PG(AV) Average gate power over any 20 ms period - 0.5 W

Tstg Storage temperature -40 150 ˚C

Tj Operating junction - 125 ˚C

temperature

T1 T2

G 1 2 3

tab

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

(18)

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 2.0 K/W

junction to mounting base half cycle - - 2.4 K/W

Rth j-a Thermal resistance in free air - 60 - K/W

junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IGT Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 2.5 10 mA

T2+ G- - 4.0 10 mA

T2- G- - 5.0 10 mA

T2- G+ - 11 25 mA

IL Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 3.0 25 mA

T2+ G- - 14 35 mA

T2- G- - 3.0 25 mA

T2- G+ - 4.0 35 mA

IH Holding current VD = 12 V; IGT = 0.1 A - 2.5 20 mA

VT On-state voltage IT = 10 A - 1.3 1.65 V

VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V

ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/µs

off-state voltage exponential waveform; gate open circuit

tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs

(19)

Fig.1. Maximum on-state dissipation, Ptot, versus rms

on-state current, IT(RMS), where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp 20ms.

Fig.3. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current IT(RMS) ,

versus mounting base temperature Tmb.

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tmb 102˚C.

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

0 2 4 6 8 10

0 2 4 6 8 10 12 = 180 120 90 60 30

IT(RMS) / A

Ptot / W Tmb(max) / C

125 121 117 113 109 105 101 1

-50 0 50 100 150

0 2 4 6 8 10 BT137 102 C

Tmb / C IT(RMS) / A

10us 100us 1ms 10ms 100ms

10 100 1000

T / s ITSM / A

T ITSM

time I

Tj initial = 25 C max

T2- G+ quadrant dI /dt limitT

0.010 0.1 1 10

5 10 15 20 25

surge duration / s IT(RMS) / A

1 10 100 1000

0

Number of cycles at 50Hz ITSM / A

1 10 20 30 40 50 60 70 80 T ITSM time I

Tj initial = 25 C max T

-50 0 50 100 150

0.4 0.6 0.8 1 1.2 1.4 1.6

Tj / C VGT(Tj)

(20)

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature Tj.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Zth j-mb, versus

pulse width tp.

-50 0 50 100 150

0 0.5 1 1.5 2 2.5 3

Tj / C

T2+ G+ T2+ T2- G-T2- G+ IGT(Tj)

IGT(25 C)

0 0.5 1 1.5 2 2.5 3

0 5 10 15 20 25

VT / V IT / A

Tj = 125 C Tj = 25 C

typ max

Vo = 1.264 V Rs = 0.0378 Ohms

-50 0 50 100 150

0 0.5 1 1.5 2 2.5 3

Tj / C IL(Tj)

IL(25 C)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

0.01 0.1 1 10

tp / s Zth j-mb (K/W)

tp P

t D

bidirectional unidirectional

2 2.5 3

IH(Tj) IH(25C)

100

(21)

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".

10,3

max

3,7

2,8

3,0

3,0 max

not tinned

1,3

max

(2x)

1 2 3

2,4

0,6

4,5

max

5,9

min

15,8

max

1,3

2,54 2,54

0,9 max (3x)

(22)

DEFINITIONS

DATA SHEET STATUS

DATA SHEET PRODUCT DEFINITIONS STATUS2

STATUS3

Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice

Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product

Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 2001

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The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

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Figure

Table 3:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Table 3:Limiting

valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). p.2
Fig 2.Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues

Fig 2.Non-repetitive

peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues p.3
Fig 1.Total power dissipation as a function of average on-state current; maximum values

Fig 1.Total

power dissipation as a function of average on-state current; maximum values p.3
Fig 3.Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values

Fig 3.Non-repetitive

peak on-state current as a function of pulse width for sinusoidal currents; maximum values p.4
Fig 4.RMS on-state current as a function of surgeduration, for sinusoidal currents; maximum

Fig 4.RMS

on-state current as a function of surgeduration, for sinusoidal currents; maximum p.4
Table 4:Thermal characteristics

Table 4:Thermal

characteristics p.5
Table 5:CharacteristicsT = 25 °C unless otherwise stated.

Table 5:CharacteristicsT

= 25 °C unless otherwise stated. p.6
Fig 7.Normalized gate trigger voltage as a function ofjunction temperature

Fig 7.Normalized

gate trigger voltage as a function ofjunction temperature p.7
Fig 11. Normalized holding current as a function ofjunction temperature

Fig 11.

Normalized holding current as a function ofjunction temperature p.8
Fig 13. Package outline SOT54 (TO-92)

Fig 13.

Package outline SOT54 (TO-92) p.9
Table 6:Revision history

Table 6:Revision

history p.10
Figure 1.  CFigure 2.

Figure 1.

CFigure 2. p.14
Figure 5.  T(RMS)Figure 6.

Figure 5.

T(RMS)Figure 6. p.15
Figure 3.  CFigure 4.

Figure 3.

CFigure 4. p.15
Figure 7.

Figure 7.

p.16
Fig.4.  Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.
Fig.4. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb. p.19
Fig.2.   Maximum permissible non-repetitive peakon-state current I, versus pulse width t, for
Fig.2. Maximum permissible non-repetitive peakon-state current I, versus pulse width t, for p.19
Fig.1.  Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where α = conduction angle.
Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where α = conduction angle. p.19
Fig.5.   Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidalcurrents, f = 50 Hz; Tmb ≤ 102˚C.
Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidalcurrents, f = 50 Hz; Tmb ≤ 102˚C. p.19
Fig.7.   Normalised gate trigger current)/ I(25˚C), versus junction temperature T
Fig.7. Normalised gate trigger current)/ I(25˚C), versus junction temperature T p.20
Fig.11.  Transient thermal impedance Zth j-mb, versuspulse width t.
Fig.11. Transient thermal impedance Zth j-mb, versuspulse width t. p.20
Fig.10.  Typical and maximum on-state characteristic.
Fig.10. Typical and maximum on-state characteristic. p.20
Fig.13.  SOT78 (TO220AB). pin 2 connected to mounting base.
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. p.21

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