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Atomistic study of the structural and electronic properties of a Si:H/c Si interfaces

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Figure 1. (Color online) H passivation of the different c-Si terminations considered in
Figure 2. (Color online) (Left) EDOS of one of the c-Si(100)(2 ×1)/a-Si:H interfaces.
Figure 3. (Color online) Representative atomic rearrangements observed at c- c-Si(100)(1 ×1)/a-Si:H (a, b, c) and c-Si(100)(2×1)/a-Si:H interfaces (d, e, f)
Table 2. Summary of the atomic rearrangements observed in the different interface
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