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Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

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Fig. 1. DC IDS — VDS — VGS characteristics of the AlGaN/GaN HEMT (solid lines) passivated with SiN and the N2 plasma pretreatment at (a) 60, (b) 150, and  (c) 210 W, during 1 min
Fig. 3. (Black triangles) Maximum frequency /max and (open circles) cutoff  frequency JT of samples passivated with SiN and N2 plasma pretreatment at  60, 150, and 210 W, respectively
Fig. 4. Topography and surface potential of AlGaN/GaN without any plasma  pretreatment: (a-a') without SiN and (b-b') with SiN layer; and with N2 plasma  pretreatment (1 min) at: (c—c') 60 and (d-d') 210 W
Fig. 5. Schematic band diagram of the AlGaN/GaN heterostructure (a) without any plasma pretreatment and after (b) low and (c) high N2 plasma power  pretreatment

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