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Novel InN/InGaN multiple quantum well structures for slow‐light generation at telecommunication wavelengths

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Academic year: 2020

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Figure

Figure  1.  AFM image of 2 x 2  µm 2  area for the InN/In x Ga (1-
Figure  3.  Estimated E1-H1 recombination energy  for the  analysed  samples  obtained  considering  the  structure  fully   re-laxed (down triangles) and fully strained (squares)
Figure  6.  Estimated  Slow-down  factor  for  the  InN/In 0.9 Ga 0.1 N MQW sample.

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