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Si nanocrystals deposited by HFCVD

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Figure

Figure 1 shows the thickness of the SiO x  films as a function  of the substrate temperature (Ts)
Figure 5 a) and b) shows the results of applied equation (1) and (2), where is considerate only the  values of the PL maximum peak () of Figure 3
Figure 5. Experimental values of the a) Gap calculated of the  equation (1) and Transmittance spectra, and b) Diameter of  the Si-nc calculated of the equation (2) and HRTEM as a  function of T s

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