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Optically enhanced photon recycling in mechanically stacked multijunction solar cells

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Academic year: 2020

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Figure

Fig. 1. Modeled reflectance at the interface behind the GaAs junction of  a GalnP/GaAs tandem for devices backed by a GaAs substrate (left) and a  ZnS/epoxy handle (right)
Fig. 3. Modeled effect of the ZnS intermediate antirefiection coating on the  V 0 c of the GaAs junction under the direct spectrum (upper panel), and the
Fig. 5. NREL-certified I—V curves acquired on an adjustable solar simulator,  under a spectrum equivalent to AM 1.5 G173 global at 1000 W/m 2
Fig. 7. Recombination currents of the individual junctions are shown as dark  I—V curves in panel (a) for a 4J mechanical stack and (b) for a 4J IMM, with the  GaAs junctions magnified in (c)
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