• No se han encontrado resultados

Multiscale modeling of junction processing in FDSOI and FinFET devices for 10nm node technology and below

N/A
N/A
Protected

Academic year: 2020

Share "Multiscale modeling of junction processing in FDSOI and FinFET devices for 10nm node technology and below"

Copied!
158
0
0

Texto completo

Loading

Referencias

Documento similar

Since we were interested in measuring the probability of secondary pulses per primary avalanche, we obtained this time distribution selecting pairs of pulses in which the first one

Hydrogenated amorphous silicon is presented as a suitable material for application in solar cells and Hot-Wire Chemical Vapour Deposition is introduced as a viable technique for

In this thesis, adsorption processes on pure silica MEL zeolite have been deeply investigated by means of a combination of experimental adsorption experiment (vol- umetric

Despite the excessive energy consumption and the great uncertainty of the laboratory- based single-junction and tandem PSCs, their environmental impacts are lower than for silicon PV.

As it was exposed in the introduction, a quite remarkable attribute of the MACE method is the low modification of the properties from the starting material. This result has

To further study the synaptic plasticity of the porous silicon memristors, a series of excitation pulse trains were applied to the devices, and afterwards the current was measured

7 and 8 is attributed to five main factors: (1) Reduction in the recombination rates by improving surface passivation, (2) improved light trapping by the use of TiO 2 thin film

We investigate the isotropic-to-nematic phase transition in systems of hard helical particles, using Onsager theory and Monte Carlo computer simulations.. Motivation of this