• No se han encontrado resultados

Thin film interference in ultra-thin layers: color coatings, tunable absorbers, and thermal emitters

N/A
N/A
Protected

Academic year: 2023

Share "Thin film interference in ultra-thin layers: color coatings, tunable absorbers, and thermal emitters"

Copied!
41
0
0

Texto completo

(1)

Thin film interference in ultra-thin layers:

color coatings, tunable absorbers, and thermal emitters

Mikhail A. Kats Harvard University

March 4, 2014 NanoLight [Benasque]

School of Engineering and Applied Sciences

(2)

Overview

Thin film interference in lossy films

Ultra-thin color coatings

Ultra-thin tunable perfect absorber in the infrared

Anomalous thermal emitter

(3)

Overview

Thin film interference in lossy films

Ultra-thin color coatings

Ultra-thin tunable perfect absorber in the infrared

Anomalous thermal emitter

(4)

Anti-reflection (AR) coating

One simple application: anti-reflective coatings

Simplest/thinnest conventional AR coating: quarter-wave film

(optimized for a particular wavelength)

𝑟12 = 𝑛1 − 𝑛2 𝑛1 + 𝑛2

(5)

Anti-reflection (AR) coating

One simple application: anti-reflective coatings

Simplest/thinnest conventional AR coating: quarter-wave film

(optimized for a particular wavelength)

Phasor diagram

(6)

Anti-reflection (AR) coating

One simple application: anti-reflective coatings

Simplest/thinnest conventional AR coating: quarter-wave film

(optimized for a particular wavelength)

Phasor diagram

Quarter-wavelength ≈ 50 nm to 150 nm in the visible

We don’t expect to see strong interference effects for films much thinner than this

(7)

Interference in lossy films

What if the film becomes very lossy?

Reflection coefficient from the 1-2 interface becomes complex-valued

Phasor r0 points away from the real axis

Im[r]

Re[r]

r0

[1]

[2]

[3]

(8)

Interference in lossy films

What if the film becomes very lossy?

Reflection coefficient from the 1-2 interface becomes complex-valued

Phasor r0 points away from the real axis

The reflection coefficient is also complex-valued at the 2-3 interface, and even more-so if the substrate index is complex (but not ∞)

Im[r]

Re[r]

r0

[1]

[2]

[3]

(9)

Interference in lossy films

What if the film becomes very lossy?

Reflection coefficient from the 1-2 interface becomes complex-valued

Phasor r0 points away from the real axis

The reflection coefficient is also complex-valued at the 2-3 interface, and even more-so if the substrate index is complex (but not ∞)

Must account for both interface reflection phase shifts and gradual phase accumulation via propagation

New interference condition  loss cannot be treated as a perturbation

Im[r]

Re[r]

r0

[1]

[2]

[3]

(10)

Lossy dielectrics + finite metals

Metals with finite conductivity and lossy dielectrics have weird interface reflection phase shifts (i. e. not 0 or π)

Different interference condition compared to the lossless case:

resonance” can exist for films significantly thinner than λ/4

Takeaway message: it is possible to suppress reflection by using interference in a system involving an ultra-thin, highly-lossy layer

Im[r]

Re[r]

h << λ/4n

r0

r1 r2 r3

M. A. Kats et al, APL 101, 221101 (2012)

(11)

Overview

Thin film interference in lossy films

Ultra-thin color coatings

Ultra-thin tunable perfect absorber in the infrared

Anomalous thermal emitter

(12)

Our first experimental system

Lossy dielectric  Amorphous germanium

Lossy metal  Gold

Ellipsometry Experiment

(13)

Our first experimental system

Lossy dielectric  Amorphous germanium

Lossy metal  Gold

Ellipsometry Experiment

Calculation Calculation

(14)

Our first experimental system

Lossy dielectric  Amorphous germanium

Lossy metal  Gold

Ellipsometry Experiment

Calculation Calculation

 60 - 90% absorption within a 10- 20 nm layer of semiconductor

 Continuous film; no patterning

 Immediate applications in mind

 Photodetectors

 Solar cells

 Localized heating

 Note: absorption enhancement without field enhancement

(15)

Coloring gold

“Colored” gold films by coating with 5-20 nm germanium films

 much thinner than λ/4

Polished substrate

Rough substrate (still works!)

Bare Au

Au + 7nm Ge

Au + 15nm Ge

M. A. Kats et al, Nat. Materials 12, 20 (2013)

(16)

Angle-dependent reflectivity spectra

Experiment

Experiment

Calculation

Calculation

Au + 15 nm of germanium

s-polarization p-polarization

(17)

Nanometer thickness optical coatings

Patterning ultra-thin coatings to create images, labels, etc

The difference between blue and purple, and purple and pink is only ~4 nm continuous film of germanium (~ 8 atomic layers)!

Photo: L. Liu

M. A. Kats et al, Nat. Materials 12, 20 (2013)

(18)

Color gradients with ultra-thin coatings

Ge film of gradient thickness on gold (top section)

Overcoat with thin Al

2

O

3

layers

Increased color contrast

Protection from the elements

Can be replaced by transparent electrode (e.g. ITO)

No Al2O3 layer

14 nm Al2O3 layer

28 nm Al2O3 layer

44 nm Al2O3 layer

Photograph Calculation

M. A. Kats et al, APL 103, 101104 (2013)

(19)

Additional layer of transparent dielectric

Au / 12 nm Ge / 44 nm Al

2

O

3

overcoat  R = 0 - 15% across the entire visible spectrum with most of the light absorbed in the germanium film

Experiment Calculation

M. A. Kats et al, APL 103, 101104 (2013)

(20)

Gold + 15 nm of Ge Equivalent material

Structural color masquerading as a pigment

θ

(21)

Gold + 15 nm of Ge

Structural color masquerading as a pigment

θ

Color by pigment

(22)

Gold + 15 nm of Ge

Structural color masquerading as a pigment

θ

Color by pigment

(23)

Gold + 15 nm of Ge

Structural color masquerading as a pigment

θ = 0˚

θ = 0˚

θ = 40˚

θ = 80˚

θ = 80˚

θ = 40˚

θ

Optically it is impossible to determine if you’re looking at a solid material, a flat pigment, or a multi-layer system with ultra-thin films

Color by pigment

Thin film

Glossy pigment

(24)

Overview

Thin film interference in lossy films

Ultra-thin color coatings

Ultra-thin tunable perfect absorber in the infrared

Anomalous thermal emitter

(25)

Lossy dielectrics + finite metals

Metals with finite conductivity and lossy dielectrics have weird interface reflection phase shifts (i. e. not 0 or π)

Resonance can exist for films significantly thinner than λ/4

To achieve full suppression of a wavelength, the film should be very lossy

Takeaway message: it is possible to achieve large (even perfect) absorption by using thin film interference in a system involving an ultra-thin, highly-lossy layer

Im[r]

Re[r]

h << λ/4n

r0

r1 r2 r3

(26)

Making a tunable perfect absorber

Our experimental system comprises a thin (180 nm vs. λ ~ 5-15 μm) film of vanadium dioxide (VO2) on sapphire

VO2 serves as highly-absorbing layer (tunable)

Sapphire is highly-reflecting due to phonon activity in the IR

(27)

Why sapphire?

In the IR, what reflectors give us non-trivial optical phase shifts upon reflection?

At λ = 12 um, conventional metals do not work

nAu ~ 15 + 60i, nFe ~ 6 + 40i, etc  all pretty much PEC-like..

Sapphire (crystalline Al2O3) fits the bill!

 Multi-phonon activity in Sapphire

At 12 um, n ~ 0.1 + 0.8i

Gervais and Piriou, J. Phys. C (1974)

(28)

Vanadium dioxide (VO

2

)

VO2 is a correlated metal oxide which experiences phase change upon heating to past ~70 °C (reversible, but with hysteresis)

Conductivity changes by >10,000 from the insulating to conducting state

Yang et al, Ann. Rev. Mat. Res. (2011)

VO2 samples from Ramanathan group @ Harvard

(29)

VO

2

in the transition region

What happens in the transition region of VO2?

Nanoscale islands of metal-phase VO2 begin to form within a background of dielectric-phase VO2, which then grow and connect

The mixture can be viewed as a disordered, natural metamaterial

The ratio of co-existing phases can be controlled  tunable medium

Qazilbash, Basov, et al, Science (2007)

(30)

Tunable perfect absorber

Temperature control of VO2 allows significant tuning of its refractive index, and hence the sample reflectivity

Reflectivity tuning from ~80% to 0.25% at 11.6um

 on/off ratio of more than 300

 entire structure is simply 180nm of VO2 on sapphire

5 10 15

0 0.2 0.4 0.6 0.8 1

Wavelength (m)

Reflectivity

297K 343K 346K 347K 348K 351K 360K

M. A. Kats et al, APL 101, 221101 (2012)

(31)

Changing the transition temperature

Doping VO2 with tungsten (W)  lower transition temperature

1% W incorporated into VO2 during growth  perfect absorption condition at ~50 °C rather than ~70 °C

2 4 6 8 10 12 14 16

0 0.2 0.4 0.6 0.8 1

Increasing Temperature (Sample1261, 1%W @ 580C)

Wavelength, (m)

Reflectance

30C + 35C + 40C + 40.5C + 41C + 41.5C + 42C + 42.5C + 43C +

43.5C + 44C + 44.5C + 45C + 45.5C + 46C + 46.5C + 47C + 47.5C +

48C + 48.5C + 49C + 49.5C + 50C + 50.5C + 51C + 51.5C + 52C +

52.5C + 53C + 53.5C + 54C + 54.5C + 55C + 55.5C + 56C + 56.5C +

57C + 57.5C + 58C + 58.5C + 59C + 59.5C + 60C + 60.5C + 61C +

61.5C + 62C + 62.5C + 63C + 63.5C + 64C + 64.5C + 65C + 65.5C +

66C + 66.5C + 67C + 67.5C + 68C + 68.5C + 69C + 69.5C + 70C +

75C + 80C + 85C + 90C + 95C + 100C +

In collaboration with:

C. Ronning, J. Rensberg H. Schmidt, I. Skorupa Wavelength (µm)

Reflectance

2 4 6 8 10 12 14 16 0

1

increasing T

(32)

Overview

Thin film interference in lossy films

Ultra-thin color coatings

Ultra-thin tunable perfect absorber in the infrared

Anomalous thermal emitter

(33)

IR absorber in reverse: thermal emitter

Spectrum/intensity of thermal radiation emitted by an object is given by Planck’s law:

Thermodynamic statement: Kirchhoff’s law of thermal radiation

Blackbody contribution

emissivity

spectroscopic

wavenumber ( = f/c)

absorptivity

(34)

IR absorber in reverse: thermal emitter

Spectrum/intensity of thermal radiation emitted by an object is given by Planck’s law:

Thermodynamic statement: Kirchhoff’s law of thermal radiation

Our VO2/sapphire structure has temperature-dependent infrared absorptivity, and hence its emissivity is expected to also vary with temperature

Anomalous behavior such as non-monotonic thermal emission with temperature

Blackbody contribution

emissivity

spectroscopic

wavenumber ( = f/c)

absorptivity

(35)

Thermal emitter: experimental setup

Data analysis must account for thermal emission from the detector and optics, and the frequency-dependent response of the instrument

Can use a wafer blackened by candle soot as blackbody-like reference (ε ≈ 0.96 in the IR)

Fourier transform infrared spectrometer (FTIR)

DTGS detector sample

temp. controller

(36)

Thermal emitter: experimental results

Extracted spectral radiance (distribution of thermal emission)

Thermal emission peak @ “perfect absorption” condition

At some point emissivity surpasses our black soot reference

Total emitted IR light goes up, then down with increasing temperature 6000 800 1000 1200 1400

1 2

3x 10-3

wavenumber (cm-1)

spectral radiance (a. u.) 50C black soot 50C VO

2/sapphire 74.5C black soot 74.5C VO

2/sapphire 100C black soot

100C VO

2/sapphire

M. A. Kats et al, Physical Review X 3, 041004 (2013)

(37)

Thermal emitter: experimental results

Integrated emitted power over the 8-14 μm atmospheric transparency region

Multiple unusual features:

Local maximum in the emitted power

Negative differential thermal emittance over ~10°

Hysteresis (intrinsic to VO2)

40 60 80 100

0.4 0.6 0.8 1 1.2

Temperature (C) Emitted power (a. u.) heating

cooling black soot

M. A. Kats et al, PRX 3, 041004 (2013)

(38)

Thermal emitter: experimental results

Integrated emitted power over the 8-14 μm atmospheric transparency region

Multiple unusual features:

Local maximum in the emitted power

Negative differential thermal emittance over ~10°

Hysteresis (intrinsic to VO2)

40 60 80 100

0.4 0.6 0.8 1 1.2

Temperature (C) Emitted power (a. u.) heating

cooling black soot

M. A. Kats et al, PRX 3, 041004 (2013)

 Design of IR emittance vs Temperature

 Efficient temperature regulation (passive or active)

 Infrared camouflage

(39)

Summary

Described existence of strong optical interference in ultra-thin, highly- absorbing films

Demonstrated ultra-thin optical interference coatings comprising lossy semiconductor films on gold substrates

Large optical absorption within nanometer-thick layers

Thin film interference without iridescence

Demonstrated a tunable absorber in the infrared based on VO2 and sapphire

Used the phase transition of VO2 as a tunable, disordered, “natural metamaterial”

Demonstrated an anomalous thermal emitter

“Perfect” blackbody-like emission,

Negative differential thermal emittance

(40)

Acknowledgements and thanks!

Federico Capasso

Romain Blanchard

Shuyan Zhang

Patrice Genevet

Steve Byrnes

Deepika Sharma

Jiao Lin

Zheng Yang

Changhyun Ko

Shriram Ramanathan

Matthias Kolle

Joanna Aizenberg

Mumtaz Qazilbash (UCSD, WM)

Dmitri Basov (UCSD)

(41)

Thank you!

Referencias

Documento similar

In the construction sector, the integration of photovoltaic systems, better known as BIPV (Building Integrated Photovoltaics), has numerous advantages since, by generating

These surface states lie in the bulk energy gap of thin topological insulators.In thin topological insulator films tunnelling between top and bottom sur- face opens a finite gap in

Figure 5 shows XAS spectra, obtained in the TEY mode at the region near the oxygen 1s absorp- tion edge, of samples grown with different plasma oxygen contents, taken at

Stars which formed from gas that was originally accreted smoothly, but form stars in the central galaxy during the ‘merger epoch’, were classified as in situ stellar merger (I-SU

16 To get more detailed information about gal- lium depth profiles at reduced maximum growth tempera- tures, the present paper reports on comprehensive depth profile analyses

(b) Scheme of an electrostatic force microscope tip and sample. The tip and sample are characterized by eight parameters: the tip sample distance D, the tip apex radius R, the

Since the oxide growth rate is approximately constant along the transformation process, the oxidation time scales linearly with the nitride thickness.. This property enables

So the flux of reflected plasma particles in the case of oxygen plasma is expected to deposit more energy onto the substrate than in the case of argon plasma, thus promoting