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Beyond the quasistatic approximation: Impedance and capacitance of an exponential distribution of traps

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Figure

Figure 1 shows a basic scheme of the model discussed in this paper. The scheme shows a piece of semiconductor, both with a transport level 共extended states兲, and localized states in the band gap
FIG. 2. 共Color online兲 共a兲 Energy diagram showing the thermal occupation at temperature T = 300 K of an exponential DOS in the band gap
FIG. 3. 共a兲 The equivalent circuit of the conduction-band states 共represented by capacitance C 0 兲 and the distribution of traps, each energy interval dE being associated with a RC circuit
Figure 4 illustrates the behavior of the trap capacitance as a function of the frequency
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