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Intermediate band solar cells. The transition metal supersaturated Silicon approach

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Figure

Fig 1: Electronic diagram of an  Intermediate band solar cell (IBSC)
Figure 3: Implanted simple with contacts at the  corners to measure the sheet resistance
Figure 4: a) Sheet resistance as a function of  measured temperature for a n-Si substrate (-)  and for double sheet TIL/n-Si substrate for  different implantation doses: 1014cm"2 (+  experimental); 1015cm"2(a experimental; •  ATLAS simulation); 5 x 1015 cm"2 (o
Figure 6: Comparison between the analytical model  results and the measured values for the sheet  resistance as a function of the temperature in the Ti  implanted sample at 1016 cm"2 dose and the V  implanted sample at 1016 cm"2 dose subsequently PLM  processed at 0.8 Jem"2
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