Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

Dependence of Halide Composition on the Stability of Highly Efficient All-Inorganic Cesium Lead Halide Perovskite Quantum Dot Solar Cells. Surface Trap States Passivation for

The scope of this Thesis is the investigation of the optical properties of two systems based on semiconductor nanostructures: InAs/GaAs quantum rings embedded in photonic

Once fabricated, these templates are further used for the formation of different low density III-V semiconductor nanostructures, as InAs quantum dots and InAs quantum dot molecules

The angular cuts (including the energy cut of 236 ± 30 MeV) and the resulting signal and background efficiencies, the expected number of signal and background events, the

In samples 1 and 3, the initial Na content in the absorber layers diffuses towards the surface as in the case of sample 2, but also the high temperature raises the Na

12 Cross-sectional SEM micrographs and the surface morphology of CZTGS thin films show that the annealed-samples coming from the evaporation process Flash 3

Figure 5.5: Difference in the EADS a) for pristine and b) for photooxidized KP115:PCBM thin films. Figure 5.6: Charge transients KP115:PCBM solar cells a) at different

It is very interesting to observe in Figure S6 the impact on the back contact interface morphology when using monolayers (Mo 1 ) and bi-layers (Mo 2 ). The overselenization