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Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells

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Figure

Figure 1.  Structure of the III-V on Si tandem solar cell  structure considered in this work
Figure 2.  Phosphorus diffusion profiles in silicon for  times ranging from 0.5h to 4h and temperatures of  675ºC and 825ºC
Figure 3.  ECV  Profiles  measured on silicon wafers  annealed at 825ºC under different flows of PH 3
Figure 5.  AFM topography scans of silicon wafers  annealed at 825ºC for 60 min. under different PH 3
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