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Developments for an embedded and reliable floating gate dosimeter

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Figure  3.  Ion  strike  charge  collection  process in  a  reversed  pn  junction:  (a) ion  strike  instant,  (b)  prompt component; drift/funneling process and (c) delayed component;  diffusion process
Figure 4. Energy band diagram for a biased MOS device under TID [17]
Figure 9. FGDOS ®  working phases; initial recharge to target, discharge due to ionizing radiation and  recharge to target because threshold achieved
Figure 17. CALLAB facility, CC60 room, dose rate profile as function of the distance to the source  [28]
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