• No se han encontrado resultados

Del descanso semanal

In document LEY 20.744 LEY DE CONTRATO DE TRABAJO (página 43-49)

that a focused image can be obtained at the CCD camera. The objectives Ob1 and Ob2 were 20x Mitutoyo Plan Apo NIR infinity-corrected objectives with numerical apertures NA= 0.4 and focal lengths f = 200 mm. The objective Ob3 was a 10x objective of the same NA. The range of incident angles was reduced to±3oC by the iris before Ob1.

All the transmittance measured from this system are obtained by referring to the transmitted light in the unpatterned area in our samples.

Figure A.2:Schematic of the setup for transmittance measurements.A halogen illuminates system as light source.L1, L2, L3 and L4 are lens with 1 inch diameter of carefully chosen focal lengths. Ob1, Ob2 and Ob3 are objectives used as light condenser. P represents polarizer. The solid black lines mean irises. The dashed line is a removable mirror. Spectro here refers to spectrometer.

.

A.3

PL mapping setup

The photoluminescence (PL) mapping of the samples shown in this thesis were measured by a commercial WiTec-alpha300S system in confocal micro- scope configuration, the setup of this system is shown in Figure A.3. The ex- citation light source are coupled into the system through fibers and we could change excitation source depending on requirements. This system could be run in both reflection and transmission mode (we show transmission here). The PL scanning is enabled by the piezo scanner and the avalanche photo diode (APD) is used to detect the signal. In addition, the spectrometer also enable us to measure the spectral data.

Figure A.3: Setup for PL mapping. The tunable light source supports wavelengths in wide range from 500 nm to 900 nm. The filters could also be changed to fit with different purposes.

References

1. P. R. Wallace, “The band theory of graphite,” Phys. Rev., vol. 71, no. 9, p. 622, 1947. (cited on page 2)

2. J. McClure, “Diamagnetism of graphite,”Phys. Rev., vol. 104, no. 3, p. 666, 1956. (cited on page 2)

3. J. Slonczewski and P. Weiss, “Band structure of graphite,” Phys. Rev., vol. 109, no. 2, p. 272, 1958. (cited on page 2)

4. G. W. Semenoff, “Condensed-matter simulation of a three-dimensional anomaly,”Phys. Rev. Lett., vol. 53, no. 26, p. 2449, 1984. (cited on page 2) 5. E. Fradkin, “Critical behavior of disordered degenerate semiconductors. II. spectrum and transport properties in mean-field theory,”Phys. Rev. B, vol. 33, no. 5, p. 3263, 1986. (cited on page 2)

6. F. D. M. Haldane, “Model for a quantum Hall effect without Landau levels: condensed-matter realization of the" parity anomaly",”Phys. Rev. Lett., vol. 61, no. 18, p. 2015, 1988. (cited on page 2)

7. R. Peierls, “Quelques propriétés typiques des corps solides,” in Annales de l’institut Henri Poincaré, vol. 5, pp. 177–222, 1935. (cited on pages 2 and 10)

8. L. D. Landau, “Zur theorie der phasenumwandlungen II,” Phys. Z. Sow- jetunion, vol. 11, pp. 26–35, 1937. (cited on page 2)

9. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atom- ically thin carbon films,” Science, vol. 306, no. 5696, pp. 666–669, 2004. (cited on pages 2 and 3)

10. K. S. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grig- orieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless dirac fermions in graphene,”Nature, vol. 438, no. 7065, pp. 197–200, 2005. (cited on page 2)

11. Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, “Experimental observa- tion of the quantum hall effect and berry’s phase in graphene,” Nature, vol. 438, no. 7065, pp. 201–204, 2005. (cited on page 2)

12. K. Novoselov, “Nobel lecture: graphene: materials in the flatland,” Rev. Mod. Phys., vol. 83, no. 3, p. 837, 2011. (cited on page 3)

13. K. F. Mak, M. Y. Sfeir, J. A. Misewich, and T. F. Heinz, “The evolution of electronic structure in few-layer graphene revealed by optical spec- troscopy,” Proc. Natl. Acad. Sci. U.S.A., vol. 107, no. 34, pp. 14999–15004, 2010. (cited on page 3)

14. R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. Peres, and A. K. Geim, “Fine structure constant defines visual transparency of graphene,” Science, vol. 320, no. 5881, pp. 1308– 1308, 2008. (cited on page 3)

15. C. Lee, X. Wei, J. W. Kysar, and J. Hone, “Measurement of the elas- tic properties and intrinsic strength of monolayer graphene,” Science, vol. 321, no. 5887, pp. 385–388, 2008. (cited on page 3)

16. A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, “Superior thermal conductivity of single-layer graphene,”

Nano Lett., vol. 8, no. 3, pp. 902–907, 2008. (cited on page 3)

17. A. S. Mayorov, R. V. Gorbachev, S. V. Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, P. Blake, K. S. Novoselov, K. Watanabe, T. Taniguchi,et al., “Micrometer-scale ballistic transport in encapsulated graphene at room temperature,” Nano Lett., vol. 11, no. 6, pp. 2396–2399, 2011. (cited on page 3)

18. J. Moser, A. Barreiro, and A. Bachtold, “Current-induced cleaning of graphene,” Appl. Phys. Lett., vol. 91, no. 16, p. 163513, 2007. (cited on page 3)

19. J. S. Bunch, S. S. Verbridge, J. S. Alden, A. M. Van Der Zande, J. M. Parpia, H. G. Craighead, and P. L. McEuen, “Impermeable atomic membranes from graphene sheets,” Nano Lett., vol. 8, no. 8, pp. 2458–2462, 2008. (cited on page 3)

20. A. C. Neto, F. Guinea, N. M. Peres, K. S. Novoselov, and A. K. Geim, “The electronic properties of graphene,” Rev. Mod. Phys., vol. 81, no. 1, p. 109, 2009. (cited on pages 2 and 4)

21. A. K. Geim, “Graphene: status and prospects,”Science, vol. 324, no. 5934, pp. 1530–1534, 2009. (cited on pages 2 and 4)

22. K. S. Novoselov, V. Fal, L. Colombo, P. Gellert, M. Schwab, K. Kim,et al., “A roadmap for graphene,”Nature, vol. 490, no. 7419, pp. 192–200, 2012. (cited on page 4)

23. B. E. A. Saleh and M. C. Teich, Fundamentals of photonics. Wiley, 2007. (cited on pages 5 and 7)

24. A. M. Fox,Optical Properties of Solids. New York: Oxford University Press, 2001. (cited on page 6)

25. C. Kittel, Introduction to Solid State Physics 8th Edition. New York: John Wiley and Sons Ltd, 2004. (cited on page 8)

References 99

26. D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides,”

Phys. Rev. Lett., vol. 108, no. 19, p. 196802, 2012. (cited on pages 8, 12, 13, 18, 20, and 63)

27. J. Wilson and A. Yoffe, “The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural prop- erties,” Adv. Phys., vol. 18, no. 73, pp. 193–335, 1969. (cited on page 9)

28. A. Yoffe, “Layer compounds,”Annu. Rev. Mater. Sci., vol. 3, no. 1, pp. 147– 170, 1973. (cited on page 9)

29. A. D. Yoffe, “Low-dimensional systems: quantum size effects and elec- tronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems,” Adv. Phys., vol. 42, no. 2, pp. 173–262, 1993. (cited on page 9)

30. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol., vol. 7, no. 11, pp. 699–712, 2012. (cited on pages 10, 11, 15, 23, 29, 47, and 65)

31. B. Radisavljevic, A. Radenovic, J. Brivio, i. V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,”Nat. Nanotechnol., vol. 6, no. 3, pp. 147–

150, 2011. (cited on pages 11 and 12)

32. Y. Ding, Y. Wang, J. Ni, L. Shi, S. Shi, and W. Tang, “First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X= S, Se, Te) monolayers,”Physica B: Condensed

Matter, vol. 406, no. 11, pp. 2254–2260, 2011. (cited on page 11)

33. A. Kuc, N. Zibouche, and T. Heine, “Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2,” Phys. Rev.

B, vol. 83, no. 24, p. 245213, 2011. (cited on pages 10 and 11)

34. M. Y. Han, B. Özyilmaz, Y. Zhang, and P. Kim, “Energy band-gap en- gineering of graphene nanoribbons,” Phys. Rev. Lett., vol. 98, no. 20, p. 206805, 2007. (cited on page 10)

35. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,”Phys. Rev. Lett., vol. 105, no. 13,

p. 136805, 2010. (cited on pages 10, 12, 13, 15, 16, 22, 29, 42, 63, and 75) 36. K. F. Mak and J. Shan, “Photonics and optoelectronics of 2D semicon-

ductor transition metal dichalcogenides,” Nat. Photonics, vol. 10, no. 4, pp. 216–226, 2016. (cited on pages 10, 12, 13, 15, 18, 19, 22, 23, 29, 47, 48, 63, and 65)

37. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett.,

38. T. Li and G. Galli, “Electronic properties of MoS2nanoparticles,” J. Phys.

Chem. C, vol. 111, no. 44, pp. 16192–16196, 2007. (cited on page 10) 39. S. Lebegue and O. Eriksson, “Electronic structure of two-dimensional

crystals from ab-initio theory,” Phys. Rev. B, vol. 79, no. 11, p. 115409, 2009. (cited on page 10)

40. F. Schwierz, “Graphene transistors,” Nat. Nanotechnol., vol. 5, no. 7, pp. 487–496, 2010. (cited on page 10)

41. R. Fivaz and E. Mooser, “Mobility of charge carriers in semiconducting layer structures,”Phys. Rev., vol. 163, no. 3, p. 743, 1967. (cited on page 10)

42. V. Podzorov, M. Gershenson, C. Kloc, R. Zeis, and E. Bucher, “High- mobility field-effect transistors based on transition metal dichalco- genides,” Appl. Phys. Lett., vol. 84, no. 17, pp. 3301–3303, 2004. (cited on page 10)

43. X. Xu, W. Yao, D. Xiao, and T. F. Heinz, “Spin and pseudospins in layered transition metal dichalcogenides,”Nat. Phys., vol. 10, no. 5, pp. 343–350, 2014. (cited on pages 12, 13, 18, 20, 29, and 63)

44. Z. Zhu, Y. Cheng, and U. Schwingenschlögl, “Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semi- conductors,”Physical Review B, vol. 84, no. 15, p. 153402, 2011. (cited on page 12)

45. T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu,et al., “Valley-selective circular dichroism of monolayer molybde- num disulphide,”Nat. Commun., vol. 3, p. 887, 2012. (cited on pages 12 and 63)

46. K. F. Mak, K. He, J. Shan, and T. F. Heinz, “Control of valley polarization in monolayer MoS2 by optical helicity,” Nat. Nanotechnol., vol. 7, no. 8,

pp. 494–498, 2012. (cited on pages 12, 20, 47, 63, and 75)

47. H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nat. Nanotechnol., vol. 7, no. 8,

pp. 490–493, 2012. (cited on pages 12, 19, 20, 47, 63, and 75)

48. G. Sallen, L. Bouet, X. Marie, G. Wang, C. Zhu, W. Han, Y. Lu, P. Tan, T. Amand, B. Liu, et al., “Robust optical emission polarization in MoS2

monolayers through selective valley excitation,” Phys. Rev. B, vol. 86, no. 8, p. 081301, 2012. (cited on pages 12 and 47)

49. A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, et al., “Optical generation of excitonic valley coherence in monolayer WSe2,” Nat. Nanotechnol., vol. 8, no. 9,

References 101

50. D. Xiao, M.-C. Chang, and Q. Niu, “Berry phase effects on electronic properties,”Rev. Mod. Phys., vol. 82, no. 3, p. 1959, 2010. (cited on page 12)

51. Y. D. Lensky, J. C. Song, P. Samutpraphoot, and L. S. Levitov, “Topolog- ical valley currents in gapped dirac materials,” Phys. Rev. Lett., vol. 114, no. 25, p. 256601, 2015. (cited on page 12)

52. K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley hall effect in MoS2 transistors,” Science, vol. 344, no. 6191, pp. 1489–1492, 2014.

(cited on pages 12, 13, 19, 20, and 63)

53. K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, “Tightly bound trions in monolayer MoS2,” Nat. Mater., vol. 12, no. 3,

pp. 207–211, 2013. (cited on pages 12 and 13)

54. J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neu- tral and charged excitons in a monolayer semiconductor,”Nat. Commun., vol. 4, p. 1474, 02 2013. (cited on pages 12, 13, 15, and 16)

55. Z. Ye, T. Cao, K. O’Brien, H. Zhu, X. Yin, Y. Wang, S. G. Louie, and X. Zhang, “Probing excitonic dark states in single-layer tungsten disul- phide,” Nature, vol. 513, no. 7517, pp. 214–218, 2014. (cited on pages 12 and 13)

56. A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, “Exciton binding en- ergy and nonhydrogenic rydberg series in monolayer WS2,” Phys. Rev.

Lett., vol. 113, no. 7, p. 076802, 2014. (cited on pages 12 and 13)

57. K. He, N. Kumar, L. Zhao, Z. Wang, K. F. Mak, H. Zhao, and J. Shan, “Tightly bound excitons in monolayer WSe2,” Phys. Rev. Lett., vol. 113,

no. 2, p. 026803, 2014. (cited on pages 12 and 13)

58. G. Wang, X. Marie, I. Gerber, T. Amand, D. Lagarde, L. Bouet, M. Vidal, A. Balocchi, and B. Urbaszek, “Giant enhancement of the optical second- harmonic emission of WSe2 monolayers by laser excitation at exciton

resonances,” Phys. Rev. Lett., vol. 114, no. 9, p. 097403, 2015. (cited on pages 12, 13, 20, 21, 22, 47, 75, and 80)

59. T. C. Berkelbach, M. S. Hybertsen, and D. R. Reichman, “Theory of neutral and charged excitons in monolayer transition metal dichalco- genides,”Phys. Rev. B, vol. 88, no. 4, p. 045318, 2013. (cited on pages 12 and 13)

60. D. Y. Qiu, H. Felipe, and S. G. Louie, “Optical spectrum of MoS2: many-

body effects and diversity of exciton states,” Phys. Rev. Lett., vol. 111, no. 21, p. 216805, 2013. (cited on pages 12 and 13)

61. Y. Zhang, T.-R. Chang, B. Zhou, Y.-T. Cui, H. Yan, Z. Liu, F. Schmitt, J. Lee, R. Moore, Y. Chen, H. Lin, H.-t. Jeng, S.-K. Mo, Z. Hussain, A. Ban- sil, and Z.-X. Shen, “Direct observation of the transition from indirect to

direct bandgap in atomically thin epitaxial MoSe2,” Nat. Nanotechnol.,

vol. 9, no. 2, pp. 111–115, 2014. (cited on page 12)

62. M. M. Ugeda, A. J. Bradley, S.-F. Shi, H. Felipe, Y. Zhang, D. Y. Qiu, W. Ruan, S.-K. Mo, Z. Hussain, Z.-X. Shen,et al., “Giant bandgap renor- malization and excitonic effects in a monolayer transition metal dichalco- genide semiconductor,”Nat. Mater., vol. 13, no. 12, pp. 1091–1095, 2014. (cited on page 12)

63. G.-B. Liu, W.-Y. Shan, Y. Yao, W. Yao, and D. Xiao, “Three-band tight- binding model for monolayers of group-VIB transition metal dichalco- genides,” Phys. Rev. B, vol. 88, no. 8, p. 085433, 2013. (cited on page 12)

64. P. Cudazzo, I. V. Tokatly, and A. Rubio, “Dielectric screening in two- dimensional insulators: implications for excitonic and impurity states in graphane,” Phys. Rev. B, vol. 84, no. 8, p. 085406, 2011. (cited on page 13)

65. A. Ramasubramaniam, “Large excitonic effects in monolayers of molyb- denum and tungsten dichalcogenides,” Phys. Rev. B, vol. 86, no. 11, p. 115409, 2012. (cited on page 13)

66. H.-P. Komsa and A. V. Krasheninnikov, “Effects of confinement and envi- ronment on the electronic structure and exciton binding energy of MoS2

from first principles,”Phys. Rev. B, vol. 86, no. 24, p. 241201, 2012. (cited on page 13)

67. H. Haug and S. W. Koch,Quantum theory of the optical and electronic prop- erties of semiconductors. World Scientific Publishing Co Inc, 2009. (cited on page 13)

68. J. Feldmann, G. Peter, E. Göbel, P. Dawson, K. Moore, C. Foxon, and R. Elliott, “Linewidth dependence of radiative exciton lifetimes in quan- tum wells,” Phys. Rev. Lett., vol. 60, no. 3, p. 243, 1988. (cited on page 13)

69. H. Haug and L. Bányai, Optical switching in low-dimensional systems. Springer, 1989. (cited on page 13)

70. J. Shang, X. Shen, C. Cong, N. Peimyoo, B. Cao, M. Eginligil, and T. Yu, “Observation of excitonic fine structure in a 2D transition-metal dichalco- genide semiconductor,”ACS Nano, vol. 9, no. 1, pp. 647–655, 2015. (cited on page 13)

71. Y. You, X.-X. Zhang, T. C. Berkelbach, M. S. Hybertsen, D. R. Reichman, and T. F. Heinz, “Observation of biexcitons in monolayer WSe2,” Nat.

Phys., vol. 11, no. 6, pp. 477–481, 2015. (cited on page 13)

72. S. Schmitt-Rink, D. Chemla, and D. Miller, “Linear and nonlinear optical properties of semiconductor quantum wells,” Adv. Phys., vol. 38, no. 2, pp. 89–188, 1989. (cited on page 13)

References 103

73. M. Fogler, L. Butov, and K. Novoselov, “High-temperature superfluidity with indirect excitons in van der Waals heterostructures,”Nat. Commun., vol. 5, 2014. (cited on page 13)

74. M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emit- ters in exfoliated WSe2 structures,” Nat. Nanotechnol., vol. 10, no. 6,

pp. 503–506, 2015. (cited on pages 13, 15, 18, and 47)

75. Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, et al., “Single quantum emitters in monolayer semiconductors,” Nat. Nanotechnol., vol. 10, no. 6, pp. 497–502, 2015. (cited on pages 13, 15, 17, 18, and 47)

76. C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nat. Nanotechnol., vol. 10, no. 6, pp. 507–511, 2015. (cited on pages 13, 15, 17, 18, and 47)

77. A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamo ˘glu, “Optically active quantum dots in monolayer WSe2,” Nat.

Nanotechnol., vol. 10, no. 6, pp. 491–496, 2015. (cited on pages 13, 15, 18, and 47)

78. J. L. O’brien, A. Furusawa, and J. Vuˇckovi´c, “Photonic quantum tech- nologies,” Nat. Photonics, vol. 3, no. 12, pp. 687–695, 2009. (cited on pages 13 and 18)

79. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ul- trasensitive photodetectors based on monolayer MoS2,” Nat. Nanotech-

nol., vol. 8, no. 7, pp. 497–501, 2013. (cited on pages 13, 14, and 29) 80. A. Pospischil, M. M. Furchi, and T. Mueller, “Solar-energy conversion

and light emission in an atomic monolayer p-n diode,”Nat. Nanotechnol., vol. 9, no. 4, pp. 257–261, 2014. (cited on pages 13, 14, 18, 20, and 47) 81. C.-H. Lee, G.-H. Lee, A. M. Van Der Zande, W. Chen, Y. Li, M. Han,

X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, et al., “Atomically thin p–n junctions with van der waals heterointerfaces,” Nat. Nanotechnol., vol. 9, no. 9, pp. 676–681, 2014. (cited on pages 13, 14, 15, and 91)

82. M. Massicotte, P. Schmidt, F. Vialla, K. G. Schädler, A. Reserbat-Plantey, K. Watanabe, T. Taniguchi, K.-J. Tielrooij, and F. H. Koppens, “Picosec- ond photoresponse in van der Waals heterostructures,”Nat. Nanotechnol., vol. 11, no. 1, pp. 42–46, 2016. (cited on pages 13 and 14)

83. L. Britnell, R. Ribeiro, A. Eckmann, R. Jalil, B. Belle, A. Mishchenko, Y.-J. Kim, R. Gorbachev, T. Georgiou, S. Morozov, et al., “Strong light-matter interactions in heterostructures of atomically thin films,”Science, vol. 340, no. 6138, pp. 1311–1314, 2013. (cited on pages 13, 14, 15, and 92)

84. Z. Luo, D. Wu, B. Xu, H. Xu, Z. Cai, J. Peng, J. Weng, S. Xu, C. Zhu, F. Wang, et al., “Two-dimensional material-based saturable absorbers: towards compact visible-wavelength all-fiber pulsed lasers,” Nanoscale, vol. 8, no. 2, pp. 1066–1072, 2016. (cited on pages 14 and 15)

85. H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheet phototransistors with thickness-

modulated optical energy gap,”Nano Lett., vol. 12, no. 7, pp. 3695–3700, 2012. (cited on page 13)

86. D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-layer MoS2 with high broadband photogain and

fast optical switching for use in harsh environments,”ACS Nano, vol. 7, no. 5, pp. 3905–3911, 2013. (cited on page 13)

87. J. S. Ross, P. Klement, A. M. Jones, N. J. Ghimire, J. Yan, D. Mandrus, T. Taniguchi, K. Watanabe, K. Kitamura, W. Yao, et al., “Electrically tun- able excitonic light-emitting diodes based on monolayer WSe2 p-n junc-

tions,”Nat. Nanotechnol., vol. 9, no. 4, pp. 268–272, 2014. (cited on pages 13, 18, 20, and 47)

88. M. Fontana, T. Deppe, A. K. Boyd, M. Rinzan, A. Y. Liu, M. Paranjape, and P. Barbara, “Electron-hole transport and photovoltaic effect in gated MoS2schottky junctions,” Sci. Rep., vol. 3, 2013. (cited on page 13)

89. R. Sundaram, M. Engel, A. Lombardo, R. Krupke, A. Ferrari, P. Avouris, and M. Steiner, “Electroluminescence in single layer MoS2,” Nano Lett.,

vol. 13, no. 4, pp. 1416–1421, 2013. (cited on pages 13 and 18)

90. R. Cheng, D. Li, H. Zhou, C. Wang, A. Yin, S. Jiang, Y. Liu, Y. Chen, Y. Huang, and X. Duan, “Electroluminescence and photocurrent gen- eration from atomically sharp WSe2/MoS2 heterojunction p–n diodes,”

Nano Lett., vol. 14, no. 10, pp. 5590–5597, 2014. (cited on pages 13 and 18) 91. B. W. Baugher, H. O. Churchill, Y. Yang, and P. Jarillo-Herrero, “Opto- electronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,”Nat. Nanotechnol., vol. 9, no. 4, pp. 262–267, 2014. (cited on pages 13, 18, and 20)

92. X. Duan, C. Wang, J. C. Shaw, R. Cheng, Y. Chen, H. Li, X. Wu, Y. Tang, Q. Zhang, A. Pan, et al., “Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions,”Nat. Nanotechnol., vol. 9, no. 12, pp. 1024–1030, 2014. (cited on page 13)

93. F. Withers, O. Del Pozo-Zamudio, A. Mishchenko, A. Rooney, A. Gholinia, K. Watanabe, T. Taniguchi, S. Haigh, A. Geim, A. Tar- takovskii,et al., “Light-emitting diodes by band-structure engineering in van der Waals heterostructures,”Nat. Mater., vol. 14, no. 3, pp. 301–306, 2015. (cited on pages 13 and 18)

References 105

94. W. J. Yu, Y. Liu, H. Zhou, A. Yin, Z. Li, Y. Huang, and X. Duan, “Highly

In document LEY 20.744 LEY DE CONTRATO DE TRABAJO (página 43-49)

Documento similar