1. In summary, we have demonstrated reproducible bipolar resistivity switching
of the SiO2-Pt device. The switching is purely electronic: the insulator to metal
transition can be triggered by UV irradiation, which can be explained by
detrapping electrons from the mixture film.
2. In addition, it is a bulk switching mechanism rather than an interface
switching phenomenon, given the symmetric, linear I-V behavior.
3. The yield can reach 100% in device fabrication once the Pt concentration and
the film thickness are optimized.
4. The fastest switching speed achieved so far is 25 ns, which is presently limited by circuit‘s RC time, below which the excitation voltage pulse is distorted and does not rise to the prescribed value promptly.
5. The device can retain their resistance state giving no indication of decay, it
also possess constant switching parameters during repeated switching and
under different switching modes.
138
breakdown at voltages that well exceed the values required for switching
operation. These excellent intrinsic properties augur well for the consideration
of our device as a strong candidate for future RRAM devices.
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