Future work that can be done towards developing InAs/InxGa1-xSb SLS’s after the laying of
this foundation includes: studies of the control of the interfaces by investigating the optimum soaking times of the different surfaces, in order to achieve perfect strain balancing in these SLS’s. This would require the controlled formation of InSb-like and GaAs-like interfaces at the GaSb to InAs and InAs to GaSb interface, respectively.
109
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Appendix: List of publications and presentations at conferences
SS Miya, V Wagener, JR Botha
“The optical and electrical properties of AP-MOVPE GaSb grown using TEGa and TMSb” Electron. Mater. Lett. (Accepted September 2013)
SS Miya, V Wagener, JR Botha
“AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation” J. Crystal Growth 370, 177 (2013)
SS Miya, V Wagener, JR Botha
“Optimization of growth parameters for MOVPE-grown GaSb and Ga1- xInxSb”
Physica B: Condensed Matter 407, 1611 (2012) SS Miya, V Wagener, JR Botha
“AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation” 16th Int. Conf. MOVPE, Busan, South Korea (May 2012)
SS Miya, V Wagener, JR Botha
“Optimization of growth parameters for MOVPE-grown GaSb and Ga1- xInxSb”