2.1 DETERMINACIÓN DE LOS INDICADORES PARA LA GESTIÓN
2.1.2 INDICADORES DE GESTIÓN EMPRESARIAL
In recent years diamond has been viewed as a potential material for fabricating flat panel displays. There are a number of flat panel display technologies both under development and in current use. Diamond's ability to field emit, coupled to its chemical inertness has made it the hub of intense research into this application. One of the most important advantages of using diamond as a field emitting material is that micromachining costs may be completely
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eliminated if diamond can successfully display stable field emitting properties from an as- grown film. This reason, along with others, motivates the development of this technology. Chapter 7 of this thesis presents a fuller account of diamond as a field emitting material.
2.8 SUMMARY
The future of CVD diamond applications, particularly within electronics, will depend upon three factors (Chalker [1996]); cost, new niche markets, and integration into existing technologies. If the cost of producing CVD diamond reduces by one or two orders of magnitude, then it will be as cost - effective a material as existing ones. The second factor, new niche markets, are already emerging e.g. diamond for field emission displays, thermal management. The income from these markets may be re-invested into developing CVD diamond production equipment thus directly addressing the cost factor. Finally, if diamond can be integrated into existing technologies such as silicon, the issue of scale-up may be resolved, thus increasing yield and lowering device costs making CVD diam ond for electronic devices a reality on a large and routine scale.
R E F E R E N C E S
Bachmann, P., [1991]. Physics World, A p ril, 32.
Bachmann, P., [1993]. In Thin Film Diamond, ed. A. Lettington and J.W. Steeds (Chapman & Hall), London.
Bakon, A. and Szymanski, A., [1993]. Practical Uses o f Diamond, (Ellis Horwood). New York, USA.
Brierley, C.J., [1991], GEC Review, 7, 87.
Chalker, P.R. and Buckley-Golder, I.M., [1996] Diamond fo r Electronic Applications, MRS symp. proc., (ed. D.L. Dreifus, A. Collins, T. Humphreys, K. Das, P.E. Pehrsson), 416, 375.
Collins, A.T and Williams, A.W.S., [1971]. J. Phys. C: Solid St. Phys., 4, 1789. Davidson, J.L., [1994]. in Synthetic Diamond: Emerging Science and Technology, ed.
K.E. Spear, J.P. Dismukes, (John Wiley), New York, USA.
Feldman, A. and Schwartz, L.H. (editors), [1991]. US Department of Commerce, NIST, Special Publication 807; "US assessment o f New Diamond Technology in Japan".
z,. itiujjcilie s, ^ y iiu ic sii aiiu ap piicauu iia
Jansen, F., Machonkin, M.A. and Kuhman, D.E., [1990]. J. Vac. Sci. Technol., B8,
3785.
Kamo, M., Sato, Y., Matsumoto, M. and Setaka, N., [1983]. J. Crystal. Growth, 62, 642.
Kawarada, M., Mar, K. and Kiraki, A., [1987]. Jpn. J. Appl. Phys., 26, L1032. Keddy, R.J., Nam, T.L. and Burns, R.C., [1988]. Carbon, 26, 345.
Kittel, C., [1986]. Introduction to Solid State Physics, (John Wiley & Sons), New York, USA.
Kiyota, H., Matsushima, Sato, K., Okushi, H., Ando, T., Kamo, M., Sato, Y. and Iida, M., [1995]. Appl. Phys. Lett., 67, 3596.
Marsh, H., [1989] in Introduction to Carbon Sae/iceXButterworths) ch. 1, 4. M atsubara, H. and Sakuma, T., [1990]. J. Mater. Science, 25, 4472.
M atsumoto, S., Sato, Y., Tsutsumi, M. and Setaka, N., [1982]. J. Mater. Science, 52, 219.
M atsumoto, S., Hino, M. and Kokayashi, T., [1987]. Appl. Phys. Lett., 51, 737. May, P.W ., Rego, C.A., Ashfold, N.M.R., Rosser, K.N., Lu, G., Walsh, T.D.,
Holt, L., Everitt, N.M. and Partridge, P.G., [1995]. Diamond Relat. Mater.,
4, 794.
M cKeag, R.D., Marshall, R.D., Baral, B., Chan, S.S.M. and Jackman, R.B.J., [1997]. Diamond Relat. Mater., 6, 374.
M orkoc, H., Strite, W.S., Gao, G.B., Lin, M.E., Sverdlov, B. and Burns, M., [1994]. J. Appl. Phys.,7 6 , 1363.
Prins, J.F., [1983]. in Ultrahard Materials Application Technology, Vol.2, (ed. P. Daniel), De Beers Industrial Diamond Division, London, 15.
Shikata, S., Nakahata, H, Higaki, K., Fujii, S., Hachigo, A., Kitabayashi, H., Seki, Y., Tenabe, K.,[1995]. in Applications o f Diamond Films and Related
Materials, NIST special publication 885, (ed. A. Feldman, Y. Tzeng, W.A. Yarbrough, M. Yoshikawa, M. Murakawa), 29.
Spitsyn, B.V., Boulor, L.L. and Denaguin, B.V., [1981]. J. Cryst. Growth. 52, 219. Sugino, T., Itagaki, T. and Shirafuji, J., [1996]. Diamond Relat. Mater., 5, 714. Suzuki, K., Sawabe, A., Yasuda, H. and Inuzuka, T., [1987]. Appl. Phys. Lett., 50,
728.
Tessmer, A.J., Plano, L.S.and Dreifus, D.L., [1993]. IEEE Electron Device Lett., 14,
6 6.
Wilks, E. and Wilks, J., [1991]. Properties and Applications o f Diamond, (Butterworth- Heinemann), Oxford, UK.
z,. r iu p c iu c s , syiiuicM i aiiu ap piiu aiiu iii
Yoder, M.N., [1991]. in Diamond and Diamond-like Films and coatings, (ed. R.E. Clausing et al), Plenum Press, New York, USA.
Zhu, W., Stoner, B.R., Williams, B.E. and Glass, J.T., [1991]. Proc. IEEE, 79, 621.
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