For the studied irradiation conditions, the hill formation phenomenon does not seem to have been observed in other materials than Ti3SiC2. Actually, in addition to the previously
mentioned ―hillocks‖ that appear for low fluences during irradiations inducing the formation of latent tracks, we can mention other similar reliefs observed on materials irradiated with ions of lower energy (few hundred of keV) to higher fluences (above 1016 cm-2); they are then
rather called ―ripples‖ [31, 32, 148, 158, 159]. Nevertheless, this phenomenon differs from that observed on Ti3SiC2, first because of the irradiation conditions, and second because the
crystalline structure, being generally under an amorphous layer, presents also ripples [31, 32]. However, it seems that the swift heavy ion irradiation of amorphous silica leads to a plastic deformation attributable to the ion hammering effect [155], also called Klaumünzer effect [160, 161]. The model relative to this effect, which seems proper to amorphous materials submitted to electronic interactions [162-166], predicts an anisotropic growth of the irradiated phase, to wit both an expansion perpendicular, and a shrinkage parallel to the ion beam (Figure 27). Moreover, it was observed that the characteristics of this anisotropic growth are in agreement with the hill formation as a function of the irradiation parameters [115]. Thus, considering this model, a hypothesis to explain the hill formation would be that the ion hammering of the oxide layer induces some strong stresses, which are opposed to the oxidation phenomenon. This stress opposition in the oxide layer could then be accommodated by the formation of hills on the surface by a mechanism still unknown.
Figure 27. Schematic illustration of the anisotropic growth in an amorphous solid impacted by a swift heavy ion; Tc is the critical temperature of thermal spike formation.
According to both the Klaumünzer effect model and the results obtained [115], the accommodation of the stresses would take place after an incubation fluence, which decreases when the electronic stopping power increases. This incubation fluence would be of about 4x1014 cm-2 for irradiations carried out at room temperature with 92 MeV Xe ions (about 21.2 keV nm-1), and above 4.5x1013 cm-2 for irradiations with 930 MeV Xe ions (about 26.3 keV nm-1).
CONCLUSIONS
In this chapter, we attempted to present an overview of the works led to understand the behaviour of Ti3SiC2 under irradiation. Such research could in particular interest the nuclear
Even though some neutron irradiations have been carried out, the studies hitherto conducted to understand the behaviour of Ti3SiC2 under irradiation seem to have been
achieved only with ion irradiations; however, the presentation of results as a function of dpa provides an estimate of the damage underwent by this material under the effect of nuclear interactions, whatever their origin.
Throughout this chapter, it appeared that the ternary compound reacts differently depending on whether it is subjected to nuclear shocks or electronic interactions. Thus, it seems clear that the Ti3SiC2 structure is not damaged by electronic interactions, notably
explaining the absence of swelling regardless of the reached fluence. This result allowed the conclusion that if there exist a threshold electronic stopping power of latent track formation in Ti3SiC2, this is greater than 28 keV nm-1. However, from a microstructural point of view, the
presence of a small amount of oxygen in the irradiation chamber leads to the ternary- compound oxidation, enhanced by the electronic excitations. Finally, probably through an accommodation of stresses caused partly by the oxidation and partly by an ion hammering effect, the presence of an oxide layer on the surface can induce the formation of hills on Ti3SiC2 by a yet unknown mechanism.
Conversely to the electronic excitations, nuclear interactions are harmful for the Ti3SiC2
structure. Moreover, the anisotropic structure of this material seems to behave in anisotropic way towards these interactions. Actually, in addition to the creation of many defects, which lead to an important disorder, the nuclear shocks cause the disappearance of the nanolamellar structure of the ternary compound, without however affecting the basal plane staking. Furthermore, the Ti3SiC2 hexagonal lattice deforms: it highly expands along the c axis, while
shrinking along the a axis, inducing some relatively strong microstrains in the network. From a microstructural point of view, the nuclear interactions are the origin of anisotropic swelling, which induce both a microstructure that differs depending on the crystallite orientation, and some microcracks at Ti3SiC2 grain boundaries. Eventually, in general, irradiations performed
at high temperatures reduce the overall damage caused by nuclear shocks, which have been observed for room temperature irradiations. More particularly, for irradiations achieved at 950 °C to high dpa, the Ti3SiC2 structural damage is almost nonexistent. This result reflects
the positive effect of temperature, which can anneal the defects created by irradiation.
These first studies led on the behaviour of Ti3SiC2 under irradiation allow to grasp the
damage of this material in nuclear reactors. Nevertheless, to complete the knowledge, it seems important to study the evolution of the properties of this ternary compound under irradiation, and more particularly the thermo-mechanical properties. Indeed, it has been shown in many metals that the creation of defect clusters induce a decrease of the dislocation mobility, and therefore an increase of the hardness of the irradiated material [1, 4, 167-169].
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Editors: It-Meng (Jim) Low and Yanchun Zhou © 2012 Nova Science Publishers, Inc.
Chapter 10