Signo

The first chapter presents a brief introduction of the future trends in emerging memory devices, especially memristor-based memories. Then, statement of the problem and thesis objectives are established. In addition, research questions and emerging thesis contributions are demonstrated.

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Chapter 2 presents a comprehensive literature review of memristor models and sneak path current problem associated with memristive crossbar array memory. It begins with the exploration of the memristor and the development of different device models. Then, several applications of the memristor device are reported. Lastly, memristor crossbar arrays are explained focusing on the sneak path current problem. Previously proposed solutions are extensively reviewed and compared to identify the advantages and limitations of each solution.

Chapter 3 presents the research methodology in details. First of all, a SRM model is proposed while completely describing each development stage to achieve the first thesis objective. Later, it presents the development of modified crossbar structures and the integration of memristor device, achieving the second objective. Lastly, the complete read and write procedures are described and the system performance metrics to be collected and processed are also defined.

In chapter 4, the developed system is simulated and raw data are collected. After processing the acquired data, performance metrics are presented for memory read and write operations individually to achieve the third objective. In addition, performance benchmarking is accomplished in order to verify the improvement of the proposed system against other related studies.

In chapter 5, a conclusion of the thesis is introduced, followed by reporting the contributions of the this research. Lastly, few recommended future research directions are proposed for further inspection.

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