CON SOLICITACIONES

Temperature-dependent dark currents were measured with a Janis closed-cycle helium refrigerator. The chip packages were attached to a cold finger in the cryostat and an Al block was placed directly on top so that it would be at the same temperature. The entire mount was then covered in Al foil, evacuated to about 10−6 _{Torr and then cooled. The temperature was adjusted with a LakeShore}

model 331 temperature controller. Current-voltage curves were measured at 10 K before the temperature was raised. Measurements were generally repeated at 10 K steps up to 100 K, and then at 20 K steps up to 200 K. Currents between 1 pA and 10 mA could be measured by the Hewlett Packard 4140B pA meter, although the noise floor was sometimes as high as 100 pA. This meter was also used as the DC voltage source and another LabVIEW programme was used to automate the measurements.

References

[1] M. Ohring, “Chemical vapor deposition,” in The materials science of thin films: deposition and structure, pp. 277–355, Academic Press, San Diego, USA, second edition, 2002.

[2] H. L. Hartnagel, A. L. Dawar, A. K. Jain and C. Jagadish, “Growth techniques,” in Semiconducting transparent thin films, pp. 23–133, Institute of Physics, Bristol, UK, 1995.

[3] M. Ohring, “Epitaxy,” in The materials science of thin films: deposition and structure, pp. 417–494, Academic Press, San Diego, USA, second edition, 2002. [4] P. D. Dapkus, “A critical comparison of MOCVD and MBE for heterojunction

devices,” Journal of Crystal Growth 68(1), pp. 345–355, 1984.

[5] L. Fu, P. Lever, K. Sears, H. H. Tan and C. Jagadish, “In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition,” IEEE Electron Device Letters 26(9), pp. 628–630, 2005.

[6] P. Lever, Interdiffusion and Metalorganic Vapour Phase Epitaxial Growth of Self-Assembled InGaAs Quantum Dot Structures and Devices, PhD thesis, The Australian National University, 2004.

[7] K. Sears,Growth and Characterisation of Self-Assembled InAs/GaAs Quantum Dots and Optoelectronic Devices, PhD thesis, The Australian National University, 2006.

[8] A. Stoffel, A. Kovács, W. Kronast and B. Müller, “LPCVD against PECVD for micromechanical applications,”Journal of Micromechanics and Microengi- neering 6(1), pp. 1–13, 1996.

[9] P. N. K. Deenapanray, H. H. Tan, L. Fu and C. Jagadish, “Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on

GaAs/AlGaAs quantum well intermixing,” Electrochemical and Solid-State Letters 3(4), pp. 196–199, 2000.

[10] Plasmalab 80 Plus compact modular plasma system: configuration details, Oxford instruments plasma technology, Bristol, UK, 1997.

[11] K. Radouane, L. Date, M. Yousfi, B. Despax and H. Caquineau, “RF discharge modelling in a N2O/SiH4 mixture for SiO2 deposition and comparison with

experiment,” Journal of Physics D 33(11), pp. 1332–1341, 2000.

[12] M. Ohring, “Physics of sputtering,” in The materials science of thin films: deposition and structure, pp. 170–183, Academic Press, San Diego, USA, second edition, 2002.

[13] D. M. Mattox, “Particle bombardment effects on thin-film deposition: A review,” Journal of Vacuum Science and Technology A 7(3), pp. 1105–1114, 1989.

[14] M. Ohring, “Plasma and ion beam processing of thin films,” in The materials science of thin films: deposition and structure, pp. 203–275, Academic Press, San Diego, USA, second edition, 2002.

[15] W. Pryor, “Footprint and utilities requirements,” inANU job 3212 ATC 2400- V sputter system: Utilities information, AJA International, North Scituate, USA, 2005.

[16] A300 series, A3CV and CTM magnetron sputtering sources: Installation and operation manual, AJA International, North Scituate, USA, 2004.

[17] W. Hale, “Re: source information,” Personal communication, 10th November 2010.

[18] M. Ohring, “Thin-film evaporation processes,” inThe materials science of thin films: deposition and structure, pp. 95–144, Academic Press, San Diego, USA, second edition, 2002.

[19] SuperSource2 convertible electron beam turret source model STIH-270- 2CK/2CKB, Temescal, BOC Edwards, Livermore, USA, revision 0101-9002- 1A, 1997.

[20] High voltage power supply instruction manual, CV-6SL, Temescal, BOC Edwards, Livermore, USA, 2005.

[21] L. F. Thompson and R. E. Kerwin, “Polymer resist systems for photo- and electron lithography,”Annual Review of Materials Science 6(1), pp. 267–301, 1976.

[22] AZ 5214 E image reversal photoresist product data sheet, Clariant, Somerville, USA, 2000.

[23] D. K. Schroder, “Optical characterization,” in Semiconductor material and device characterization, pp. 563–626, IEEE Press, Wiley, Hoboken, USA, third edition, 2006.

[24] J. W. Edington, Electron Diffraction in the Electron Microscope, volume 2 of Monographs in practical electron microscopy in materials science, Macmillan, Philips technical library, London, UK, 1975.

[25] Zeonrex electronic chemicals, ZEP520A High Resolution Positive Electron Beam Resist, Zeon corporation, Kanagawa-ken, Japan, version 1.01, 2003. [26] A. Clawson, “Guide to references on III-V semiconductor chemical etching,”

[27] VLN advanced maintenance training, Plasma-Therm LLC, St. Petersburg, USA, release 04.2007, 2007.

[28] VLN preventative maintenance training, Plasma-Therm LLC, St. Petersburg, USA, release 04.2009, 2009.

[29] Alpha-step 200, Tencor Instruments, Mountain View, USA, # 084875 revision C, 1986.

[30] M. Ohring, “Characterization of thin films and surfaces,” in The materials science of thin films: deposition and structure, pp. 559–640, Academic Press, San Diego, USA, second edition, 2002.

[31] AFM probe Model: Tap300Al, BudgetSensors, 2008.

[32] Nanoscope III multimode scanning probe microscope, Digital Instruments, Santa Barbara, USA, version 1.5, 1993.

[33] K. Thure, Through transmissive media module setup and operation guide, Bruker Nano Surfaces Business (previously Veeco Metrology Group), Tucson, USA, revision A, 2006.

[34] C. Lamb and M. Zecchino,WYKO surface profilers technical reference manual, Bruker Nano Surfaces Business (previously Veeco Metrology Group), Tucson, USA, version 2.2.1, 1999.

[35] B. E. A. Saleh and M. C. Teich, “Statistical optics,” in Fundamentals of photonics, pp. 342–383, Wiley, New York, USA, 1991.

[36] “A short course in ellipsometry,” inGuide to using WVASETM, pp. 5–59, J.A. Woollam Co., Inc, Lincoln, USA, 1995.

[37] R. K. Sampson and H. Z. Massoud, “Resolution of silicon wafer temperature measurement by in situ ellipsometry in a rapid thermal processor,”Journal of The Electrochemical Society 140(9), pp. 2673–2678, 1993.

[38] I. H. Malitson, “Interspecimen comparison of the refractive index of fused silica,”Journal of the Optical Society of America55(10), pp. 1205–1208, 1965. [39] W. A. Lanford and M. J. Rand, “The hydrogen content of plasma-deposited

silicon nitride,” Journal of Applied Physics 49(4), pp. 2473–2477, 1978. [40] Vertex 80v user manual, Bruker Optik, Ettlingen, Germany, first edition, 2006. [41] Opus spectroscopy software reference manual, Bruker Optik, Ettlingen, Ger-

many, version 6, 2006.

[42] D. K. Schroder, “Chemical and physical characterization,” in Semiconductor material and device characterization, pp. 627–688, IEEE Press, Wiley, Hobo- ken, USA, third edition, 2006.

[43] L. C. Feldman and J. W. Mayer, Fundamentals of thin film analysis, PTR Prentice Hall, Upper Saddle River, USA, 1986.

[44] J. B. Schroeder, ANU - Canberra 5SDH pelletron - assembly, National Electrostatics Corporation, Middleton, USA, drawing number 1-0-5153, 1999. [45] D. Weisser, N. Lobanov, H. Wallace and T. Kitchen, “NEC Alphatross charge exchange ion source,” in42nd Symposium of North Eastern Accelerator Personnel, Ann Arbor, USA, 2008.

[46] L. R. Doolittle, “Algorithms for the rapid simulation of Rutherford backscat- tering spectra,”Nuclear Instruments and Methods in Physics Research Section B 9(3), pp. 344–351, 1985.

[47] J. W. Edington, The operation and calibration of the electron microscope, volume 1 ofMonographs in practical electron microscopy in materials science, Macmillan, Philips technical library, London, UK, 1974.

[48] D. B. Williams and C. B. Carter, Basics, volume 1 of Transmission electron microscopy: a textbook for materials science, Springer, New York, USA, first edition, 1996.

[49] Operators manual: Blackbody reference source model IR-563/301, Infrared Systems Development Corporation, Winter Park, USA, 2004.

3

Chapter 3

Design of bandpass filters at

mid-infrared wavelengths

3.1

Introduction

D

significantly expedited with simulation packages. In this chapter, the guided-mode resonances used in bandpass dielectric filters are characterised with numerical simulations. These designs are then used as the basis for the experimental work that is discussed in the following two chapters. Rather than documenting the series of simulations that was used to optimise the filter structure, the final design is presented and described. These results show that the resonance wavelength is tunable with the geometry of the photonic crystal pattern, suggesting that these filters could be useful for hyperspectral imaging arrays. Further simulation results are then presented to explore the characteristics of the resonance peak. As well as simulating the

Figure 3.1: Diffraction by a step-index grating with average refractive index √_g. The electric field (E) of the incident wave is perpendicular to the grooves.~ The directly reflected/transmitted waves are denoted bym= 0 and the orders of the other diffracted waves are denotedm∈Z. Adapted from [5,6].

influences of polarisation and angle of incidence, the convergence of the results and the spatial distribution of the transmitted light are also investigated. Initially, guided-mode resonances are placed in context with the scattering anomalies that were historically observed from diffraction gratings. A summary of the finite- difference time-domain technique is then presented, followed by the simulation results of the narrowband filters.