PONTIFICIA UNIVERSIDAD CATÓLICA DEL PERÚ

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(1)TESIS PUCP. Esta obra ha sido publicada bajo la licencia Creative Commons Reconocimiento-No comercial-Compartir bajo la misma licencia 2.5 Perú. Para ver una copia de dicha licencia, visite http://creativecommons.org/licenses/by-nc-sa/2.5/pe/.

(2) PONTIFICIA UNIVERSIDAD CATÓLICA DEL PERÚ FACULTAD DE CIENCIAS E INGENIERÍA. DISEÑO DE EFECTOS Y VARIACIÓN DE COLORES MEDIANTE DEGRADÉ EN LEDS DE POTENCIA RGB APLICADOS A PANELES PUBLICITARIOS Anexos. Jhair Andree Baldárrago Catcoparco. ASESOR: Willy Eduardo Carrera Soria. Lima, octubre del 2010.

(3) DISPLAYTRONIC A DIVISION OF ZE XIAMEN CO., LTD.. SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY. PART NUMBER:. ACM 1602N SERIES. DATE:. August 9, 1999.

(4) ACM1602N SERIES LCD MODULE 1.0 MECHANICAL SPECS 1. Overall Module Size. 85.0mm(W) x 29.5mm(H) x max 13.5mm(D) for LED backlight version 85.0mm(W) x 29.5mm(H) x max 9.5mm(D) for reflective version. 2. Dot Size. 0.56mm(W) x 0.61mm(H). 3. Dot Pitch. 0.61mm(W) x 0.66mm(H). 4. Duty. 1/16. 5. Controller IC. KS0066. 6. LC Fluid Options. TN, STN. 7. Polarizer Options. Reflective, Transflective, Transmissive. 8. Backlight Options. LED. 9. Temperature Range Options. Standard(0ºC ~ 50ºC), Wide(-20ºC ~ 70ºC). 2.0 ABSOLUTE MAXIMUM RATINGS Item. Symbol. Min. Typ. Max. Unit. Operating temperature (Standard). Top. 0. -. 50. ºC. Storage temperature (Standard). Tst. -10. -. 60. ºC. Operating temperature (Wide temperature). Top. -20. -. 70. ºC. Storage temperature (Wide temperature). Tst. -30. -. 80. ºC. Input voltage. Vin. Vss. Vdd. V. Supply voltage for logic. Vdd- Vss. 2.7. -. 5.5. V. Supply voltage for LCD drive. Vdd- Vo. 3.0. 4.6. 6.5. V. DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 1.

(5) ACM1602N SERIES LCD MODULE 3.0 ELECTRICAL CHARACTERISTICS Item. Symbol. Condition. Min. Typ. Max. Unit. Input voltage (high). Vih. H level. 2.2. -. Vdd. V. Input voltage (low). Vil. L level. 0. -. 0.6. V. 0ºC. -. 4.8. 5.4. 25ºC. 4.2. 4.6. -. 50ºC. 3.9. 4.3. -. -20ºC. -. 6.4. 7.2. 0ºC. -. 4.8. -. 50ºC. -. 4.2. -. 70ºC. 3.5. 4.0. -. Idd. Vdd=5.0V, fosc=270kHz. -. 0.8. 1.8. mA. LED Power Supply Voltage. Vfled. R=6.8Ω. -. 4.6. 5.0. V. LED Power Supply Current. Ifled. R=6.8Ω. -. 120. 300. mA. Recommended LC Driving Voltage (Standard Temp). Recommended LC Driving Voltage (Wide Temp). Power Supply Current. Vdd - Vo. Vdd -Vo. V. V. 4.0 OPTICAL CHARACTERISTICS (Ta=25ºC, Vdd= 5.0V±0.25V, TN LC fluid) Item. Symbol. Condition. Min. Typ. Max. Unit. Viewing angle (horizontal). θ. Cr ≥ 4.0. -25. -. -. deg. Viewing angle (vertical). φ. Cr ≥ 4.0. -30. -. 30. deg. Contrast Ratio. Cr. φ=0°, θ=0°. -. 2. -. Response time (rise). Tr. φ=0°, θ=0°. -. 120. 150. ms. Response time (fall). Tf. φ=0°, θ=0°. -. 120. 150. ms. DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 2.

(6) ACM1602N SERIES LCD MODULE 4.1 OPTICAL CHARACTERISTICS (Ta=25ºC, Vdd= 5.0V±0.25V, STN LC fluid) Item. Symbol. Condition. Min. Typ. Max. Unit. Viewing angle (horizontal). θ. Cr ≥ 2.0. -60. -. 35. deg. Viewing angle (vertical). φ. Cr ≥ 2.0. -40. -. 40. deg. Contrast Ratio. Cr. φ=0°, θ=0°. -. 6. -. Response time (rise). Tr. φ=0°, θ=0°. -. 150. 250. ms. Response time (fall). Tf. φ=0°, θ=0°. -. 150. 250. ms. 5.0 BLOCK DIAGRAM. U2. 1. Vdd 2. Vss 3. Vo. SEG1- 40. SEG41- 80 40. 4. RS 5. R/W 6. E. U1. SEG 1. 40 SEG 80. COM 1. ~. LCD 16 X 2. COM 16 16. 7. DB0 8. COM16. 14. DB7. +/A BL+ -/K BL-. DISPLAYTRONIC. LED BACKLIGHT. A DIVISION OF ZE XIAMEN. 09/15/99. 3.

(7) ACM1602N SERIES LCD MODULE 6.0 PIN ASSIGNMENT. 7.0 POWER SUPPLY. Pin No.. Symbol. Function. 1. Vdd. +5V. 2. Vss. Ground. 3. Vo. LCD contrast adjust. 4. RS. Register select. 5. R/W. Read / write. 6. E. Enable. 7. DB0. Data bit 0. 8. DB1. Data bit 1. 9. DB2. Data bit 2. 10. DB3. Data bit 3. 11. DB4. Data bit 4. 12. DB5. Data bit 5. 13. DB6. Data bit 6. 14. DB7. Data bit 7. +/A. BL+. Power Supply for BL+. -/K. BL-. Power Supply for BL-. Vdd. Vo. Vr. +5V. Vss STANDARD TEMP RANGE. Vdd. Vo. Vr. +5V. -5V Vss WIDE TEMP RANGE Vr = 10KΩ ~ 20KΩ. 8.0 TIMING CHARACTERISTICS Item Enable cycle time. Symbol tC. Test Condition. Min.. Typ.. Max.. Unit. Fig. a, Fig. b. 500. -. -. ns. Enable pulse width. tW. Fig. a, Fig. b. 220. -. -. ns. Enable rise/fall time. tR , tF. Fig. a, Fig. b. -. -. 25. ns. RS, R/W set up time. tSU. Fig. a, Fig. b. 40. -. -. ns. RS, R/W hold time. Fig. a, Fig. b. 10. -. -. ns. Data delay time. tH tD. Fig. b. -. -. 120. ns. Data set up time. tDSU. Fig. a. 60. -. -. ns. Data hold time. tDH. Fig. a, Fig. b. 20. -. -. ns. DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 4.

(8) ACM1602N SERIES LCD MODULE. RS R/W. VIH1. VIH1. VIL1 t SU. VIL1 tH. V IL1. VIL1 tW. tF. VIH1. E. VIH1. VIL1 tR. VIL1 tDSU VIH1. DB0~DB7. tH. VIL1 tDH. Valid Data. VIL1. VIH1 VIL1. tC. Fig. a Interface timing (data write). RS. VIH1. VIH1. VIL1. VIL1 tH. tSU VIH1. VIH1. R/W tW. E. tF. VIH1 VIL1. VIH1. tR. t DSU. tD VIH1. DB0~DB7. tH. VIL1. VIL1 t DH. Valid Data. VIL1. VIH1 VIL1. tC. Fig. b Interface timing (data read). DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 5.

(9) ACM1602N SERIES LCD MODULE 9.0 MECHANICAL DIAGRAM. DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 6.

(10) ACM1602N SERIES LCD MODULE 10.0 RELIABILITY TEST Evaluations and Assessment* Storage Condition. Content. Operation at high temperature and humidity High temperature storage Low temperature storage. Oozing. Contrast. Other Appearances. 40ºC,90% RH,240hrs. Current Consumption Twice initial value or less. none. More than 80% of initial value. No abnormality. 60ºC, 240hrs -20ºC, 240hrs. Twice initial value or less Twice initial value or less. none. More than 80% of initial value More than 80% of initial value. No abnormality No abnormality. *Evaluations and assessment to be made two hours after returning to room temperature (25ºC±5ºC). *The LCDs subjected to the test must not have dew condensation.. DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 7.

(11) ACM1602N SERIES LCD MODULE 11.0 DISPLAY INSTRUCTION TABLE DESCRIPTION. Executing time fosc=250khz. 1. Clears Display & Returns to Address 0.. 1.64ms. 1. x. Returns Cursor to Address 0. Also returns the display being shifted to the original position. DDRAM contents remain unchanged.. 1.64ms. I/D. S. I/D: Set Cursor Moving Direction I/D=1: Increment I/D=0: Decrement. COMMAND. R R/ DB DB DB DB S W 7 6 5 4. DB 3. DB 2. DB DB 1 0. Clear Display. 0. 0 0. 0. 0. 0. 0. 0. 0. Cursor at Home. 0. 0 0. 0. 0. 0. 0. 0. Entry Mode Set. 0. 0 0. 0. 0. 0. 0. 1. 40µs. S: Specify Shift of Display S=1: The display is shifted S=0: The display is not shifted Display ON/OFF Control. 0. 0 0. 0. Cursor / Display Shift. 0. 0 0. 0. 0. 1. S/C. R/L. x. x. Moves cursor or shifts the display w/o changing DD RAM contents S/C=0: Cursor Shift (RAM unchanged) S/C=1: Display Shift (RAM unchanged) R/L=1: Shift to the Right R/L=0: Shift to the Left. Function Set. 0. 0 0. 0. 1. DL. N. F. x. x. Sets data bus length (DL), # of display lines (N), and character fonts (F). DL=1: 8 bits F=0: 5x7 dots DL=0: 4 bits F=1: 5x10 dots N=0: 1 line display N=1: 2 lines display. Set CG RAM Address. 0. 0 0. 1. Set DD RAM Address. 0. 0 1. Busy Flag / 0 Address Read. 1 B F. Write Data. 1. 0. Read Data. 1. 1. 0. 0. 1. D. C. B. Character Generator (CG) RAM Address. Display D=1: Display on D=0: Display off Cursor C=1: Cursor on C=0: Cursor off Brink B=1: Brink on B=0: Brink off. 40µs. 40µs. 40µs. Sets CG RAM address. CG RAM data is sent and received after this instruction.. 40µs. Display Data (DD) RAM Address / Cursor Address. Sets DD RAM address. DD Ram data is sent and received after this instruction.. 40µs. Address counter used for both DD & CG RAM address. Reads Busy Flag (BF) and address counter contents.. 40µs. Write Data. Writes data into DDRAM or CGRAM.. 46µs. Read Data. Reads data from DDRAM or CGRAM.. 46µs. x: Don't Care.. DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 8.

(12) ACM1602N SERIES LCD MODULE 12.0 STANDARD CHARACTER PATTERNS. Note: The character generator RAM is the RAM with which the user can rewrite character patterns by program.. DISPLAYTRONIC. A DIVISION OF ZE XIAMEN. 09/15/99. 9.

(13) 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features. Description. ■ UL recognized (File # E90700, Volume 2). The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.. ■ VDE recognized (File # 102497). – Add option V (e.g., 4N25VM). Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs. Schematic. Package Outlines. 1. 6. 2. 5. 3. NC. 4. PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. January 2009.

(14) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.. Symbol. Parameter. Value. Units. TOTAL DEVICE TSTG. Storage Temperature. -40 to +150. °C. TOPR. Operating Temperature. -40 to +100. °C. TSOL. Wave solder temperature (see page 8 for reflow solder profile). PD. 260 for 10 sec. °C. 250. mW. Total Device Power Dissipation @ TA = 25°C Derate above 25°C. 2.94. EMITTER IF. DC/Average Forward Input Current. 60. mA. VR. Reverse Input Voltage. 6. V. IF(pk) PD. Forward Current – Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C. 3. A. 120. mW. 1.41. mW/°C. DETECTOR VCEO. Collector-Emitter Voltage. 30. V. VCBO. Collector-Base Voltage. 70. V. VECO. Emitter-Collector Voltage. PD. Detector Power Dissipation @ TA = 25°C Derate above 25°C. 7. V. 150. mW. 1.76. mW/°C. Electrical Characteristics (TA = 25°C unless otherwise specified) Individual Component Characteristics Symbol. Parameter. Test Conditions. Min.. Typ.*. Max.. Unit. EMITTER VF. Input Forward Voltage. IF = 10mA. 1.18. 1.50. V. IR. Reverse Leakage Current. VR = 6.0V. 0.001. 10. µA. DETECTOR BVCEO. Collector-Emitter Breakdown Voltage. IC = 1.0mA, IF = 0. 30. 100. V. BVCBO. Collector-Base Breakdown Voltage. IC = 100µA, IF = 0. 70. 120. V. 7. 10. BVECO. Emitter-Collector Breakdown Voltage. IE = 100µA, IF = 0. ICEO. Collector-Emitter Dark Current. VCE = 10V, IF = 0. ICBO. Collector-Base Dark Current. VCB = 10V. CCE. Capacitance. VCE = 0V, f = 1 MHz. V. 1. 50. nA. 20. nA. 8. pF. Isolation Characteristics Symbol. Characteristic. Test Conditions. Min.. Typ.* Max.. Units. VISO. Input-Output Isolation Voltage. f = 60Hz, t = 1 sec. 7500. Vac(pk). RISO. Isolation Resistance. VI-O = 500 VDC. 1011. Ω. CISO. Isolation Capacitance. VI-O = &, f = 1MHz. 0.2. 2. pF. *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com 2. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. Absolute Maximum Ratings (TA = 25°C unless otherwise specified).

(15) Transfer Characteristics Symbol. Parameter. Test Conditions. Device. Min. Typ.* Max.. Unit. DC CHARACTERISTICS CTR. VCE (SAT). Current Transfer Ratio, Collector to Emitter. Collector-Emitter Saturation Voltage. IF = 10mA, VCE = 10V. 4N35M, 4N36M, 4N37M. 100. H11A1M. 50. %. H11A5M. 30. 4N25M, 4N26M H11A2M, H11A3M. 20. 4N27M, 4N28M H11A4M. 10. IF = 10mA, VCE = 10V, TA = -55°C. 4N35M, 4N36M, 4N37M. 40. IF = 10mA, VCE = 10V, TA = +100°C. 4N35M, 4N36M, 4N37M. 40. IC = 2mA, IF = 50mA. 4N25M, 4N26M, 4N27M, 4N28M,. 0.5. IC = 0.5mA, IF = 10mA. 4N35M, 4N36M, 4N37M. 0.3. H11A1M, H11A2M, H11A3M, H11A4M, H11A5M. 0.4. V. AC CHARACTERISTICS TON. TOFF. Non-Saturated Turn-on Time. Turn-off Time. IF = 10mA, VCC = 10V, RL = 100Ω (Fig. 11). 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4, H11A5M. 2. IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11). 4N35M, 4N36M, 4N37M. 2. IF = 10mA, VCC = 10V, RL = 100Ω (Fig. 11). 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M. 2. IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11). 4N35M, 4N36M, 4N37M. 2. µs. 10. µs µs. 10. * Typical values at TA = 25°C. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com 3. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified).

(16) Fig. 2 Normalized CTR vs. Forward Current 1.6. 1.7. 1.4. 1.6. 1.2. NORMALIZED CTR. VF - FORWARD VOLTAGE (V). Fig. 1 LED Forward Voltage vs. Forward Current 1.8. 1.5. 1.4. TA = -55°C. 1.3 TA = 25°C. VCE = 5.0V TA = 25°C. Normalized to IF = 10 mA. 1.0. 0.8. 0.6. 1.2. 0.4 TA = 100°C. 1.1. 0.2. 1.0. 0.0 1. 10. 100. 0. 2. 4. 6. NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)). IF = 5 mA. NORMALIZED CTR. 12. 14. 16. 18. 20. 1.0. 1.2. 1.0 IF = 10 mA 0.8. IF = 20 mA. 0.6. 0.4 Normalized to IF = 10 mA TA = 25°C -40. -20. 0. 20. 40. 60. 80. 0.9 IF = 20 mA 0.8 IF = 10 mA. 0.7. IF = 5 mA. 0.6 0.5 0.4 0.3 0.2. VCE = 5.0 V 0.1 0.0. 100. 10. 100. 1000. RBE- BASE RESISTANCE (kΩ). TA - AMBIENT TEMPERATURE (°C). Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current. Fig. 5 CTR vs. RBE (Saturated). 100. 1.0 0.9. VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V). NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)). 10. Fig. 4 CTR vs. RBE (Unsaturated). Fig. 3 Normalized CTR vs. Ambient Temperature 1.4. 0.2 -60. 8. IF - FORWARD CURRENT (mA). IF - LED FORWARD CURRENT (mA). VCE= 0.3 V 0.8 IF = 20 mA. 0.7 0.6. IF = 10 mA. 0.5 0.4 0.3. IF = 5 mA. 0.2. TA = 25˚C. 10. 1. IF = 2.5 mA. 0.1. IF = 20 mA. 0.01. 0.1 IF = 10 mA. IF = 5 mA. 0.0 10. 100. 0.001 0.01. 1000. RBE- BASE RESISTANCE (k Ω). ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. 0.1. 1. 10. IC - COLLECTOR CURRENT (mA). www.fairchildsemi.com 4. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. Typical Performance Curves.

(17) Fig. 8 Normalized ton vs. RBE. Fig. 7 Switching Speed vs. Load Resistor 1000. 5.0. NORMALIZED ton - (ton(RBE) / ton(open)). SWITCHING SPEED - (µs). IF = 10 mA VCC = 10 V TA = 25°C 100. Toff. 10. Tf. Ton 1. Tr. 0.1 0.1. 1. 10. VCC = 10 V IC = 2 mA RL = 100 Ω. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5. 100. 10. 100. R-LOAD RESISTOR (kΩ). ICEO - COLLECTOR -EMITTER DARK CURRENT (nA). NORMALIZED toff - (toff(RBE) / toff(open)). 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6. VCC = 10 V IC = 2 mA RL = 100 Ω. 0.5 0.4 0.3 0.2 1000. 100000. 10000 VCE = 10 V TA = 25°C. 1000. 100. 10. 1. 0.1. 0.01. 0.001. 0.1 100. 10000. Fig. 10 Dark Current vs. Ambient Temperature. Fig. 9 Normalized toff vs. RBE 1.4. 10. 1000. RBE- BASE RESISTANCE (k Ω). 10000. 100000. 0. 20. 40. 60. 80. 100. TA - AMBIENT TEMPERATURE (°C). RBE- BASE RESISTANCE (k Ω). TEST CIRCUIT. WAVE FORMS. VCC = 10V INPUT PULSE. IC. IF INPUT. RL 10%. OUTPUT. OUTPUT PULSE. 90%. RBE. tr ton. tf toff. Adjust IF to produce IC = 2 mA. Figure 11. Switching Time Test Circuit and Waveforms. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com 5. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. Typical Performance Curves (Continued).

(18) Through Hole. 0.4" Lead Spacing. 8.13–8.89 6. 4. 8.13–8.89 6. 4. 1. 3. 6.10–6.60 6.10–6.60. Pin 1. 1. 3. Pin 1 5.08 (Max.). 0.25–0.36. 7.62 (Typ.). 3.28–3.53. 5.08 (Max.). 0.25–0.36. 3.28–3.53. 0.38 (Min.). 2.54–3.81 0.38 (Min.). 2.54–3.81. 0.20–0.30 2.54 (Bsc). (0.86). 15° (Typ.) 2.54 (Bsc). (0.86). 0.41–0.51 1.02–1.78. 0.20–0.30. 0.41–0.51 0.76–1.14. 10.16–10.80. 1.02–1.78 0.76–1.14. Surface Mount (1.78). 8.13–8.89 6. 4. (1.52) (2.54) (7.49). 6.10–6.60 8.43–9.90. (10.54). 1. 3. (0.76). Pin 1. Rcommended Pad Layout. 0.25–0.36. 3.28–3.53 5.08 (Max.) 0.38 (Min.). 0.20–0.30. 2.54 (Bsc) (0.86). 0.16–0.88 (8.13). 0.41–0.51 1.02–1.78 0.76–1.14. Note: All dimensions in mm.. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com 6. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. Package Dimensions.

(19) Order Entry Identifier (Example). Option. Description. No option. 4N25M. S. 4N25SM. Standard Through Hole Device. SR2. 4N25SR2M. T. 4N25TM. 0.4" Lead Spacing VDE 0884. Surface Mount Lead Bend Surface Mount; Tape and Reel. V. 4N25VM. TV. 4N25TVM. VDE 0884, 0.4" Lead Spacing. SV. 4N25SVM. VDE 0884, Surface Mount. SR2V. 4N25SR2VM. VDE 0884, Surface Mount, Tape and Reel. Marking Information. 1. V 3. 4N25. 2. X YY Q. 6. 5. 4. Definitions 1. Fairchild logo. 2. Device number. 3. VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table). 4. One digit year code, e.g., ‘7’. 5. Two digit work week ranging from ‘01’ to ‘53’. 6. Assembly package code. *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format.. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com 7. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. Ordering Information.

(20) 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05. Ø1.5 MIN. 4.0 ± 0.1. 0.30 ± 0.05. 1.75 ± 0.10. 11.5 ± 1.0 21.0 ± 0.1. 9.1 ± 0.20. Ø1.5 ± 0.1/-0. 10.1 ± 0.20. 0.1 MAX. 24.0 ± 0.3. User Direction of Feed. Reflow Profile 300 260°C. 280 260. >245°C = 42 Sec. 240 220 200 180. °C. Time above 183°C = 90 Sec. 160 140 120 1.822°C/Sec Ramp up rate. 100 80 60 40. 33 Sec. 20 0 0. 60. 120. 180. 270. 360. Time (s). ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com 8. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. Carrier Tape Specification.

(21) Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ®. Fairchild® Fairchild Semiconductor® FACT Quiet Series™ ® FACT FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™. ®. FRFET SM Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ®. PDP SPM™ Power-SPM™ PowerTrench® PowerXS™. Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ®. TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ µSerDes™ ®. UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™. The Power Franchise®. * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification. Product Status. Advance Information. Formative / In Design. Preliminary. First Production. No Identification Needed. Full Production. Obsolete. Not In Production. Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2. www.fairchildsemi.com 9. 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers. TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks..

(22) MMBT3904. PZT3904 C. C. E. E C. B. C. TO-92 SOT-23. E. B. B. SOT-223. Mark: 1A. NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.. Absolute Maximum Ratings* Symbol. TA = 25°C unless otherwise noted. Parameter. Value. Units. VCEO. Collector-Emitter Voltage. 40. V. VCBO. Collector-Base Voltage. 60. V. VEBO. Emitter-Base Voltage. 6.0. V. IC. Collector Current - Continuous. 200. mA. TJ, Tstg. Operating and Storage Junction Temperature Range. -55 to +150. °C. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.. Thermal Characteristics Symbol PD. TA = 25°C unless otherwise noted. Characteristic. RθJC. Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case. RθJA. Thermal Resistance, Junction to Ambient. Max. Units. 2N3904 625 5.0 83.3. *MMBT3904 350 2.8. **PZT3904 1,000 8.0. 200. 357. 125. mW mW/°C °C/W °C/W. *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2..  2001 Fairchild Semiconductor Corporation. 2N3904/MMBT3904/PZT3904, Rev A. 2N3904 / MMBT3904 / PZT3904. 2N3904.

(23) (continued). Electrical Characteristics Symbol. TA = 25°C unless otherwise noted. Parameter. Test Conditions. Min. Max. Units. OFF CHARACTERISTICS V(BR)CEO. IC = 1.0 mA, IB = 0. V(BR)CBO. Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage. 40. V. V(BR)EBO. Emitter-Base Breakdown Voltage. IC = 10 µA, IE = 0. 60. V. IE = 10 µA, IC = 0. 6.0. V. IBL. Base Cutoff Current. VCE = 30 V, VEB = 3V. 50. nA. ICEX. Collector Cutoff Current. VCE = 30 V, VEB = 3V. 50. nA. ON CHARACTERISTICS* hFE. DC Current Gain. VCE(sat). Collector-Emitter Saturation Voltage. VBE(sat). Base-Emitter Saturation Voltage. IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA. 40 70 100 60 30. 0.65. 300. 0.2 0.3 0.85 0.95. V V V V. SMALL SIGNAL CHARACTERISTICS fT. Current Gain - Bandwidth Product. Cobo. Output Capacitance. Cibo. Input Capacitance. NF. Noise Figure. IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7kHz. 300. MHz 4.0. pF. 8.0. pF. 5.0. dB. SWITCHING CHARACTERISTICS td. Delay Time. VCC = 3.0 V, VBE = 0.5 V,. 35. ns. tr. Rise Time. IC = 10 mA, IB1 = 1.0 mA. 35. ns. ts. Storage Time. VCC = 3.0 V, IC = 10mA. 200. ns. tf. Fall Time. IB1 = IB2 = 1.0 mA. 50. ns. *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10). 2N3904 / MMBT3904 / PZT3904. NPN General Purpose Amplifier.

(24) (continued). V CE = 5V. 400 125 °C. 300 25 °C. 200 - 40 °C. 100 0 0.1. 1 10 I C - COLLECTOR CURRENT (mA). 100. Base-Emitter Saturation Voltage vs Collector Current 1. 0.8. β = 10. - 40 °C 25 °C. 0.6 125 °C. 0.4 0.1 IC. 1 10 - COLLECTOR CURRENT (mA). 100. VCESAT- COLLECTOR-EMITTER VOLTAGE (V). 500. VBE(ON)- BASE-EMITTER ON VOLTAGE (V). Typical Pulsed Current Gain vs Collector Current. VBESAT- BASE-EMITTER VOLTAGE (V). h FE - TYP ICAL PULSED CURRE NT GAIN. Typical Characteristics. Collector-Emitter Saturation Voltage vs Collector Current 0.15. 125 °C. 0.1 25 °C. 0.05 - 40 °C. 0.1. 1 VCE = 5V 0.8. - 40 °C 25 °C. 0.6 125 °C. 0.4. 0.2 0.1. 1 10 I C - COLLECTOR CURRENT (mA). 100. 10 f = 1.0 MHz. VCB = 30V. CAPACITANCE (pF). ICBO- COLLECTOR CURRENT (nA). 100. Capacitance vs Reverse Bias Voltage. 500. 10 1 0.1. 25. 1 10 I C - COLLECTOR CURRENT (mA). Base-Emitter ON Voltage vs Collector Current. Collector-Cutoff Current vs Ambient Temperature 100. β = 10. 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C). 150. 5 4 3. C ibo. 2 C obo. 1 0.1. 1 10 REVERSE BIAS VOLTAGE (V). 100. 2N3904 / MMBT3904 / PZT3904. NPN General Purpose Amplifier.

(25) (continued). Typical Characteristics. (continued). Noise Figure vs Source Resistance. Noise Figure vs Frequency. 12 I C = 1.0 mA R S = 200Ω. 10. V CE = 5.0V. I C = 1.0 mA. NF - NOISE FIGURE (dB). NF - NOISE FIGURE (dB). 12. I C = 50 µA R S = 1.0 kΩ. 8. I C = 0.5 mA R S = 200Ω. 6 4 2. I C = 100 µA, R S = 500 Ω. 0 0.1. 1 10 f - FREQUENCY (kHz). 10 I C = 5.0 mA I C = 50 µA. 8 6. I C = 100 µA. 4 2 0 0.1. 100. V CE = 40V I C = 10 mA 10 100 f - FREQUENCY (MHz). PD - POWER DISSIPATION (W). - CURRENT GAIN (dB) fe. h. θ. 1. θ - DEGREES. 0 20 40 60 80 100 120 140 160 180. h fe. 1. 1000. SOT-223 0.75. TO-92. 0.5. SOT-23 0.25. 0. 0. Turn-On Time vs Collector Current I B1 = I B2 =. Ic. VCC = 40V. 10. TIME (nS). 15V t r @ V CC = 3.0V 2.0V. 10 1. 10 I C - COLLECTOR CURRENT (mA). 125. 150. 100. I B1 = I B2 =. Ic 10. T J = 25°C T J = 125°C. 10. t d @ VCB = 0V 5. 50 75 100 TEMPERATURE (o C). Rise Time vs Collector Current. 40V 100. 25. 500. t r - RISE TIME (ns). 500. 100. Power Dissipation vs Ambient Temperature. Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0. 1 10 R S - SOURCE RESISTANCE ( kΩ ). 100. 5. 1. 10 I C - COLLECTOR CURRENT (mA). 100. 2N3904 / MMBT3904 / PZT3904. NPN General Purpose Amplifier.

(26) (continued). Typical Characteristics. (continued). Storage Time vs Collector Current I B1 = I B2 =. T J = 25°C. Fall Time vs Collector Current 500. Ic. I B1 = I B2 =. 10. t f - FALL TIME (ns). t S - STORAGE TIME (ns). 500. 100 T J = 125°C. 10 5. T J = 125°C. 100 T J = 25°C. 1. 10 I C - COLLECTOR CURRENT (mA). 5. 100. 1. 10 I C - COLLECTOR CURRENT (mA). Current Gain h oe - OUTPUT ADMITTANCE ( µmhos). V CE = 10 V f = 1.0 kHz T A = 25oC. 100. 10 0.1. 1 I C - COLLECTOR CURRENT (mA). 1. 1 I C - COLLECTOR CURRENT (mA). 10. V CE = 10 V f = 1.0 kHz T A = 25oC. 10. 1 0.1. 1 I C - COLLECTOR CURRENT (mA). 10. Voltage Feedback Ratio. ) _4. V CE = 10 V f = 1.0 kHz T A = 25oC. 10. 0.1 0.1. 100. 10. Input Impedance 100. 100. Output Admittance. h re - VOLTAGE FEEDBACK RATIO (x10. h fe - CURRENT GAIN. VCC = 40V. 10. 500. h ie - INPUT IMPEDANCE (kΩ ). Ic 10. 10 7. V CE = 10 V f = 1.0 kHz T A = 25oC. 5 4 3 2. 1 0.1. 1 I C - COLLECTOR CURRENT (mA). 10. 2N3904 / MMBT3904 / PZT3904. NPN General Purpose Amplifier.

(27) (continued). Test Circuits 3.0 V. 275 Ω. 300 ns 10.6 V Duty Cycle = 2%. Ω 10 KΩ 0. C1 < 4.0 pF. - 0.5 V < 1.0 ns. FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V. 10 < t1 < 500 µs. t1 10.9 V. 275 Ω. Duty Cycle = 2% Ω 10 KΩ. 0. C1 < 4.0 pF 1N916. - 9.1 V < 1.0 ns. FIGURE 2: Storage and Fall Time Equivalent Test Circuit. 2N3904 / MMBT3904 / PZT3904. NPN General Purpose Amplifier.

(28) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST . FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™. PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8. SyncFET™ TinyLogic™ UHC™ VCX™. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification. Product Status. Definition. Advance Information. Formative or In Design. This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.. Preliminary. First Production. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.. No Identification Needed. Full Production. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.. Obsolete. Not In Production. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.. Rev. G.

(29) IRF540A. Advanced Power MOSFET FEATURES. BVDSS = 100 V. Avalanche Rugged Technology. RDS(on) = 0.052 Ω. Rugged Gate Oxide Technology Lower Input Capacitance. ID = 28 A. Improved Gate Charge Extended Safe Operating Area. TO-220. Ο. 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.). 1 2 3. 1.Gate 2. Drain 3. Source. Absolute Maximum Ratings Symbol VDSS. Characteristic Drain-to-Source Voltage. 28 19.8. Ο. 1 O. Drain Current-Pulsed. VGS. Gate-to-Source Voltage. EAS. Single Pulsed Avalanche Energy. IAR. Avalanche Current. EAR. Repetitive Avalanche Energy. dv/dt. Peak Diode Recovery dv/dt. O 1 O 1 O O3 2. TL. A. 110 + _ 20. A. 523. mJ. 28. A. V. 10.7. mJ. 6.5. V/ns. Total Power Dissipation (TC=25 C ). 107. W. Linear Derating Factor. 0.71. W/ C. Ο. TJ , TSTG. V. Continuous Drain Current (TC=100 C). IDM. PD. Units. 100. Continuous Drain Current (TC=25 C) Ο. ID. Value. Operating Junction and. Ο. - 55 to +175. Storage Temperature Range. Ο. Maximum Lead Temp. for Soldering. C. 300. Purposes, 1/8” from case for 5-seconds. Thermal Resistance Symbol. Characteristic. Typ.. Max.. R θJC. Junction-to-Case. --. 1.4. R θCS. Case-to-Sink. 0.5. --. R θJA. Junction-to-Ambient. --. 62.5. Units Ο. C /W. Rev. B. ©1999 Fairchild Semiconductor Corporation.

(30) N-CHANNEL POWER MOSFET. IRF540A. Electrical Characteristics (TC=25 C unless otherwise specified) Ο. Min. Typ. Max. Units. Symbol. Characteristic. BVDSS. Drain-Source Breakdown Voltage. ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on). 100. --. --. V Ο. --. 0.11. --. V C. 2.0. --. 4.0. V. Gate-Source Leakage , Forward. --. --. 100. Gate-Source Leakage , Reverse. --. --. -100. --. --. 10. Breakdown Voltage Temp. Coeff. Gate Threshold Voltage. Drain-to-Source Leakage Current Static Drain-Source On-State Resistance. VGS=20V VGS=-20V VDS=100V Ο. VDS=80V,TC=150 C. 100. --. --. 0.052. Ω. VGS=10V,ID=14A. 4 O. --. Ω. VDS=40V,ID=14A. 4 O. --. 22.56. Ciss. Input Capacitance. --. 1320 1710. Coss. Output Capacitance. --. 325. 380. Crss. Reverse Transfer Capacitance. --. 148. 170. td(on). Turn-On Delay Time. --. 18. 50. Rise Time. --. 18. 50. Turn-Off Delay Time. --. 90. 180. Fall Time. --. 56. 120. Qg. Total Gate Charge. --. 60. 78. Qgs. Gate-Source Charge. --. 10.8. --. Qgd. Gate-Drain(“Miller”) Charge. --. 27.9. --. tf. VDS=5V,ID=250 µA. --. Forward Transconductance. td(off). µA. VGS=0V,ID=250 µ A See Fig 7 ID=250 µ A. --. gfs. tr. nA. Test Condition. pF. VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A,. ns. RG=9.1 Ω See Fig 13. 4 O 5 O. VDS=80V,VGS=10V, nC. ID=28A See Fig 6 & Fig 12. 4 O 5 O. Source-Drain Diode Ratings and Characteristics Symbol. Characteristic. Min. Typ. Max. Units. Test Condition. IS. Continuous Source Current. --. --. 28. ISM. Pulsed-Source Current. 1 O. --. --. 110. VSD. Diode Forward Voltage. 4 O. --. --. 1.5. V. TJ=25 C ,IS=28A,VGS=0V. trr. Reverse Recovery Time. --. 132. --. TJ=25 C ,IF=28A. Qrr. Reverse Recovery Charge. --. 0.63. --. ns µC. A. Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=1mH, I AS=28A, V DD=25V, R G=27 Ω, Starting T J =25 C O O3 ISD <_ 28A, di/dt <_ 400A/ µs, V DD<_ BVDSS , Starting T J =25 oC _2% 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O. Integral reverse pn-diode in the MOSFET Ο. Ο. diF/dt=100A/ µs. 4 O.

(31) N-CHANNEL POWER MOSFET. IRF540A. Fig 1. Output Characteristics 102. Fig 2. Transfer Characteristics 102. VGS. ID , Drain Current. ID , Drain Current. [A]. 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V. [A]. Top :. 101. @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC. 100 10-1. 100. 175 oC. 101 25 oC. - 55 oC. 3. 250 µs Pulse Test 100. 101. 2. 4. [A] IDR , Reverse Drain Current. RDS(on) , [Ω] Drain-Source On-Resistance. Fig 3. On-Resistance vs. Drain Current 0.08. VGS = 10 V. 0.04. VGS = 20 V 0.02. @ Note : TJ. = 25 oC. 30. 60. 8. 10. 90. Fig 4. Source-Drain Diode Forward Voltage 102. 101. 120. @ Notes : 1. VGS = 0 V. 175 oC 25 oC 100 0.4. 0.00 0. 6. VGS , Gate-Source Voltage [V]. VDS , Drain-Source Voltage [V]. 0.06. @ Notes : 1. VGS = 0 V 2. VDS = 40 V. 0.6. 0.8. ID , Drain Current [A]. 2. 250 µs Pulse Test 1.0. 1.2. 1.4. 1.6. 1.8. 2.0. 2.2. 2.4. VSD , Source-Drain Voltage [V]. Fig 5. Capacitance vs. Drain-Source Voltage. Fig 6. Gate Charge vs. Gate-Source Voltage. C iss. [V]. 2000. Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd. VGS , Gate-Source Voltage. Capacitance. [pF]. 2500. 1500 C oss 1000. @ Notes : 1. VGS = 0 V C rss. 2. f = 1 MHz. 500. 00 10. 101. VDS , Drain-Source Voltage [V]. VDS = 20 V. 10. VDS = 50 V VDS = 80 V. 5. @ Notes : ID =28.0 A 0. 0. 10. 20. 30. 40. 50. QG , Total Gate Charge [nC]. 60. 70.

(32) N-CHANNEL POWER MOSFET. Fig 7. Breakdown Voltage vs. Temperature 1.2. 1.1. 1.0. 0.9. Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance. BVDSS , (Normalized) Drain-Source Breakdown Voltage. IRF540A. @ Notes : 1. VGS = 0 V 2. ID = 250 µA. 0.8 -75. -50. -25. 0. 25. 50. 75. 100. 125. 150. 175. 3.0. 2.5. 2.0. 1.5. 1.0. 2. ID = 14.0 A 0.0 -75. 200. -25. 0. 25. 50. 75. 100. 125. 150. 175. 200. TJ , Junction Temperature [ oC]. Fig 9. Max. Safe Operating Area. Fig 10. Max. Drain Current vs. Case Temperature 30. [A]. [A]. -50. TJ , Junction Temperature [ oC]. 103 Operation in This Area is Limited by R DS(on). ID , Drain Current. 25. 102. 10 µs 100 µs 1 ms 10 ms. 101 DC. @ Notes : 1. TC = 25 oC. 100. 10-1 0 10. 20. 15. 10. 5. 2. TJ = 175 oC 3. Single Pulse 101. 0 25. 102. 50. 75. 100. 125. Tc , Case Temperature [ oC]. VDS , Drain-Source Voltage [V]. Thermal Response. Fig 11. Thermal Response 100 D=0.5 @ Notes : 1. Zθ J C (t)=1.4 o C/W Max. 2. Duty Factor, D=t1 /t2. 0.2 0.1 10- 1. 3. TJ M -TC =PD M *Zθ J C (t) 0.05. PDM. 0.02 0.01. t1. single pulse. t2. θ. Z JC(t) ,. ID , Drain Current. @ Notes : 1. VGS = 10 V. 0.5. 10- 2 - 5 10. 10- 4. 10- 3. 10- 2. 10- 1. t 1 , Square Wave Pulse Duration. 100. [sec]. 101. 150. 175.

(33) N-CHANNEL POWER MOSFET. IRF540A Fig 12. Gate Charge Test Circuit & Waveform. “ Current Regulator ”. 12V. VGS. Same Type as DUT. 50K Ω. Qg. 200nF. 10V. 300nF. VDS. Qgd. Qgs. VGS DUT 3mA. R2. R1 Current Sampling (I G) Resistor. Charge. Current Sampling (I D) Resistor. Fig 13. Resistive Switching Test Circuit & Waveforms. RL Vout. Vout. 90%. VDD. Vin. ( 0.5 rated V DS ). RG DUT Vin. 10V. 10%. td(on). tr. td(off). t on. tf t off. Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms. BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD. LL VDS Vary tp to obtain required peak ID. BVDSS IAS. ID. RG. C DUT. ID (t). VDD. VDS (t). VDD. 10V tp. tp. Time.

(34) N-CHANNEL POWER MOSFET. IRF540A. Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms. DUT. + VDS --. IS L Driver. VGS RG VGS. VGS ( Driver ). Same Type as DUT. VDD. • dv/dt controlled by “RG” • IS controlled by Duty Factor “D”. Gate Pulse Width D = -------------------------Gate Pulse Period. 10V. IFM , Body Diode Forward Current. IS ( DUT ). di/dt. IRM Body Diode Reverse Current. VDS ( DUT ). Body Diode Recovery dv/dt. Vf. Body Diode Forward Voltage Drop. VDD.

(35) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™. UHC™ VCX™. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification. Product Status. Definition. Advance Information. Formative or In Design. This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.. Preliminary. First Production. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.. No Identification Needed. Full Production. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.. Obsolete. Not In Production. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only..

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(37) LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator Features. General Description. ■ Output Current up to 1A. The LM78XX series of three terminal positive regulators are available in the TO-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting, thermal shut down and safe operating area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 1A output current. Although designed primarily as fixed voltage regulators, these devices can be used with external components to obtain adjustable voltages and currents.. ■ Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24 ■ Thermal Overload Protection ■ Short Circuit Protection ■ Output Transistor Safe Operating Area Protection. Ordering Information Product Number. Output Voltage Tolerance. Package. Operating Temperature. ±4%. TO-220. -40°C to +125°C. LM7805CT LM7806CT LM7808CT LM7809CT LM7810CT LM7812CT LM7815CT LM7818CT LM7824CT LM7805ACT. ±2%. 0°C to +125°C. LM7806ACT LM7808ACT LM7809ACT LM7810ACT LM7812ACT LM7815ACT LM7818ACT LM7824ACT. ©2006 Fairchild Semiconductor Corporation. LM78XX/LM78XXA Rev. 1.0. 1. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. March 2008.

(38) LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Block Diagram Input. Series Pass Element. 1 Current Generator. Starting Circuit. Output 3. SOA Protection. Reference Voltage. Error Amplifier. Thermal Protection GND 2. Figure 1.. Pin Assignment TO-220 GND. 1. Input 2. GND 3. Output. 1. Figure 2.. Absolute Maximum Ratings Absolute maximum ratings are those values beyond which damage to the device may occur. The datasheet specifications should be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. Fairchild does not recommend operation outside datasheet specifications.. Symbol VI. Parameter Input Voltage. Value. Unit. VO = 5V to 18V. 35. V. VO = 24V. 40. V. RθJC. Thermal Resistance Junction-Cases (TO-220). 5. °C/W. RθJA. Thermal Resistance Junction-Air (TO-220). 65. °C/W. TOPR. Operating Temperature Range. -40 to +125. °C. TSTG. LM78xx LM78xxA. Storage Temperature Range. -65 to +150. 2. LM78XX/LM78XXA Rev. 1.0. 0 to +125 °C. www.fairchildsemi.com.

(39) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 10V, CI = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Parameter. Min.. Typ.. Max.. Unit. TJ = +25°C. 4.8. 5.0. 5.2. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 7V to 20V. 4.75. 5.0. 5.25. VO = 7V to 25V. –. 4.0. 100. VI = 8V to 12V. –. 1.6. 50.0. IO = 5mA to 1.5A. –. 9.0. 100. IO = 250mA to 750mA. –. 4.0. 50.0. –. 5.0. 8.0. mA. Quiescent Current Change IO = 5mA to 1A. –. 0.03. 0.5. mA. VI = 7V to 25V. –. 0.3. 1.3. IO = 5mA. –. -0.8. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 42.0. –. µV/VO. 62.0. 73.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 15.0. –. mΩ. VI = 35V, TA = +25°C. –. 230. –. mA. TJ = +25°C. –. 2.2. –. A. Output Voltage. Line Regulation(1). Regload Load. IQ ∆IQ ∆VO/∆T VN RR VDROP. Regulation(1). Quiescent Current. Output Voltage. Drift(2). Output Noise Voltage Ripple. Rejection(2). Dropout Voltage Resistance(2). rO. Output. ISC. Short Circuit Current. IPK. (2). Peak Current. Conditions. TJ = +25°C TJ = +25°C TJ = +25°C. f = 120Hz, VO = 8V to 18V. mV. mV. Notes: 1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 2. These parameters, although guaranteed, are not 100% tested in production.. 3 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7805).

(40) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 11V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Regload. Parameter. Conditions. Output Voltage. Line Regulation(3). Min. Typ.. Max.. Unit. TJ = +25°C. 5.75. 6.0. 6.25. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 8.0V to 21V. 5.7. 6.0. 6.3. VI = 8V to 25V. –. 5.0. 120. VI = 9V to 13V. –. 1.5. 60.0. IO = 5mA to 1.5A. –. 9.0. 120. IO = 250mA to 750mA. –. 3.0. 60.0. TJ = +25°C. (3). Load Regulation. TJ = +25°C. mV. mV. IQ. Quiescent Current. TJ = +25°C. –. 5.0. 8.0. mA. ∆IQ. Quiescent Current Change. IO = 5mA to 1A. –. –. 0.5. mA. VI = 8V to 25V. –. –. 1.3. Output Voltage Drift. IO = 5mA. –. -0.8. –. mV/°C. Output Noise Voltage. f = 10Hz to 100kHz, TA = +25°C. –. 45.0. –. µV/VO. 62.0. 73.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 19.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. ∆VO/∆T VN RR VDROP. (4). Ripple. Rejection(4). Dropout Voltage Resistance(4). rO. Output. ISC. Short Circuit Current. IPK. Current(4). Peak. f = 120Hz, VO = 8V to 18V. Notes: 3. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 4. These parameters, although guaranteed, are not 100% tested in production.. 4 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7806) (Continued).

(41) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 14V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Parameter Output Voltage. Line Regulation(5) (5). Regload Load Regulation. IQ ∆IQ ∆VO/∆T VN RR VDROP. Conditions. Min.. Typ.. Max.. Unit. TJ = +25°C. 7.7. 8.0. 8.3. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 10.5V to 23V. 7.6. 8.0. 8.4. VI = 10.5V to 25V. –. 5.0. 160. VI = 11.5V to 17V. –. 2.0. 80.0. IO = 5mA to 1.5A. –. 10.0. 160. IO = 250mA to 750mA. –. 5.0. 80.0. TJ = +25°C TJ = +25°C. mV. mV. Quiescent Current. TJ = +25°C. –. 5.0. 8.0. mA. Quiescent Current Change. IO = 5mA to 1A. –. 0.05. 0.5. mA. VI = 10.5V to 25V. –. 0.5. 1.0. IO = 5mA. –. -0.8. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 52.0. –. µV/VO. f = 120Hz, VO = 11.5V to 21.5V. 56.0. 73.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 17.0. –. mΩ. VI = 35V, TA = +25°C. –. 230. –. mA. TJ = +25°C. –. 2.2. –. A. Output Voltage. Drift(6). Output Noise Voltage Ripple. Rejection(6). Dropout Voltage Resistance(6). rO. Output. ISC. Short Circuit Current. IPK. Current(6). Peak. Notes: 5. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 6. These parameters, although guaranteed, are not 100% tested in production.. 5 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7808) (Continued).

(42) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 15V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Parameter Output Voltage. Line Regulation(7). Conditions. Min.. Typ.. Max.. Unit. TJ = +25°C. 8.65. 9.0. 9.35. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 11.5V to 24V. 8.6. 9.0. 9.4. –. 6.0. 180. –. 2.0. 90.0. –. 12.0. 180. –. 4.0. 90.0. –. 5.0. 8.0. mA. –. –. 0.5. mA. VI = 11.5V to 26V. –. –. 1.3. IO = 5mA. –. -1.0. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 58.0. –. µV/VO. 56.0. 71.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 17.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. TJ = +25°C VI = 11.5V to 25V VI = 12V to 17V. (7). Regload Load Regulation. TJ = +25°C IO = 5mA to 1.5A IO = 250mA to 750mA. IQ ∆IQ ∆VO/∆T VN RR VDROP. Quiescent Current. TJ = +25°C. Quiescent Current Change IO = 5mA to 1A Output Voltage. Drift(8). Output Noise Voltage Ripple. Rejection(8). Dropout Voltage Resistance(8). rO. Output. ISC. Short Circuit Current. IPK. Current(8). Peak. f = 120Hz, VO = 13V to 23V. mV. mV. Notes: 7. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 8. These parameters, although guaranteed, are not 100% tested in production.. 6 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7809) (Continued).

(43) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 16V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol. Min.. Typ.. Max.. Unit. TJ = +25°C. 9.6. 10.0. 10.4. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 12.5V to 25V. 9.5. 10.0. 10.5. VI = 12.5V to 25V. –. 10.0. 200. VI = 13V to 25V. –. 3.0. 100. IO = 5mA to 1.5A. –. 12.0. 200. IO = 250mA to 750mA. –. 4.0. 400. –. 5.1. 8.0. mA. –. –. 0.5. mA. VI = 12.5V to 29V. –. –. 1.0. Output Voltage Drift(10). IO = 5mA. –. -1.0. –. mV/°C. VN. Output Noise Voltage. f = 10Hz to 100kHz, TA = +25°C. –. 58.0. –. µV/VO. RR. Ripple Rejection(10). f = 120Hz, VO = 13V to 23V. 56.0. 71.0. –. dB. Dropout Voltage. IO = 1A, TJ = +25°C. –. 2.0. –. V. rO. Output Resistance(10). f = 1kHz. –. 17.0. –. mΩ. ISC. Short Circuit Current. VI = 35V, TA = +25°C. –. 250. –. mA. IPK. Peak Current(10). TJ = +25°C. –. 2.2. –. A. VO. Regline. Parameter Output Voltage. Line Regulation(9). Regload Load Regulation(9). IQ ∆IQ. ∆VO/∆T. VDROP. Quiescent Current. Conditions. TJ = +25°C. TJ = +25°C. TJ = +25°C. Quiescent Current Change IO = 5mA to 1A. mV. mV. Notes: 9. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 10. These parameters, although guaranteed, are not 100% tested in production.. 7 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7810) (Continued).

(44) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 19V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Parameter Output Voltage. Line Regulation(11). Conditions. Min.. Typ.. Max.. Unit. TJ = +25°C. 11.5. 12.0. 12.5. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 14.5V to 27V. 11.4. 12.0. 12.6. –. 10.0. 240. –. 3.0. 120. –. 11.0. 240. –. 5.0. 120. –. 5.1. 8.0. mA. –. 0.1. 0.5. mA. VI = 14.5V to 30V. –. 0.5. 1.0. IO = 5mA. –. -1.0. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 76.0. –. µV/VO. 55.0. 71.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 18.0. –. mΩ. VI = 35V, TA = +25°C. –. 230. –. mA. TJ = +25°C. –. 2.2. –. A. TJ = +25°C VI = 14.5V to 30V VI = 16V to 22V. Regload. (11). Load Regulation. TJ = +25°C IO = 5mA to 1.5A IO = 250mA to 750mA. IQ ∆IQ ∆VO/∆T VN RR VDROP. Quiescent Current. Quiescent Current Change IO = 5mA to 1A Output Voltage. Drift(12). Output Noise Voltage Ripple. Rejection(12). Dropout Voltage Resistance(12). rO. Output. ISC. Short Circuit Current. IPK. TJ = +25°C. Peak. Current(12). f = 120Hz, VI = 15V to 25V. mV. mV. Notes: 11. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 12. These parameters, although guaranteed, are not 100% tested in production.. 8 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7812) (Continued).

(45) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 23V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Parameter Output Voltage. Line Regulation(13). Conditions. Min.. Typ.. Max.. Unit. TJ = +25°C. 14.4. 15.0. 15.6. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 17.5V to 30V. 14.25. 15.0. 15.75. –. 11.0. 300. –. 3.0. 150. –. 12.0. 300. –. 4.0. 150. –. 5.2. 8.0. mA. –. –. 0.5. mA. VI = 17.5V to 30V. –. –. 1.0. IO = 5mA. –. -1.0. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 90.0. –. µV/VO. f = 120Hz, VI = 18.5V to 28.5V. 54.0. 70.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 19.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. TJ = +25°C VI = 17.5V to 30V VI = 20V to 26V. (13). Regload Load Regulation. TJ = +25°C IO = 5mA to 1.5A IO = 250mA to 750mA. IQ ∆IQ ∆VO/∆T VN RR VDROP. Quiescent Current. Quiescent Current Change IO = 5mA to 1A Output Voltage. Drift(14). Output Noise Voltage Ripple. Rejection(14). Dropout Voltage Resistance(14). rO. Output. ISC. Short Circuit Current. IPK. TJ = +25°C. Peak. Current(14). mV. mV. Notes: 13. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 14. These parameters, although guaranteed, are not 100% tested in production.. 9 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7815) (Continued).

(46) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 27V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Parameter. Min.. Typ.. Max.. Unit. TJ = +25°C. 17.3. 18.0. 18.7. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 21V to 33V. 17.1. 18.0. 18.9. TJ = +25°C VI = 21V to 33V. –. 15.0. 360. VI = 24V to 30V. –. 5.0. 180. –. 15.0. 360. –. 5.0. 180. –. 5.2. 8.0. mA. Quiescent Current Change IO = 5mA to 1A. –. –. 0.5. mA. VI = 21V to 33V. –. –. 1.0. IO = 5mA. –. -1.0. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 110. –. µV/VO. 53.0. 69.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 22.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. Output Voltage. Line Regulation(15) (15). Regload Load Regulation. Conditions. TJ = +25°C IO = 5mA to 1.5A IO = 250mA to 750mA. IQ ∆IQ ∆VO/∆T VN RR VDROP. Quiescent Current. Output Voltage. Drift(16). Output Noise Voltage Ripple. Rejection(16). Dropout Voltage Resistance(16). rO. Output. ISC. Short Circuit Current. IPK. Peak. Current(16). TJ = +25°C. f = 120Hz, VI = 22V to 32V. mV. mV. Notes: 15. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 16. These parameters, although guaranteed, are not 100% tested in production.. 10 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7818) (Continued).

(47) Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 33V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.. Symbol VO. Regline. Parameter. Min.. Typ.. Max.. Unit. TJ = +25°C. 23.0. 24.0. 25.0. V. 5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 27V to 38V. 22.8. 24.0. 25.25. VI = 27V to 38V. –. 17.0. 480. VI = 30V to 36V. –. 6.0. 240. IO = 5mA to 1.5A. –. 15.0. 480. IO = 250mA to 750mA. –. 5.0. 240. –. 5.2. 8.0. mA. Quiescent Current Change IO = 5mA to 1A. –. 0.1. 0.5. mA. VI = 27V to 38V. –. 0.5. 1.0. IO = 5mA. –. -1.5. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 60.0. –. µV/VO. 50.0. 67.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. Output Voltage. Line Regulation(17) (17). Regload Load Regulation. IQ ∆IQ ∆VO/∆T VN RR VDROP. Quiescent Current. Output Voltage. TJ = +25°C TJ = +25°C TJ = +25°C. Drift(18). Output Noise Voltage Ripple. Conditions. Rejection(18). Dropout Voltage (18). f = 120Hz, VI = 28V to 38V. mV. mV. rO. Output Resistance. f = 1kHz. –. 28.0. –. mΩ. ISC. Short Circuit Current. VI = 35V, TA = +25°C. –. 230. –. mA. TJ = +25°C. –. 2.2. –. A. IPK. Peak. Current(18). Notes: 17. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 18. These parameters, although guaranteed, are not 100% tested in production.. 11 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7824) (Continued).

(48) Symbol VO. Regline. Parameter Output Voltage. Line Regulation(19). Conditions. Min.. Typ.. Max.. Unit. TJ = +25°C. 4.9. 5.0. 5.1. V. IO = 5mA to 1A, PO ≤ 15W, VI = 7.5V to 20V. 4.8. 5.0. 5.2. VI = 7.5V to 25V, IO = 500mA. –. 5.0. 50.0. VI = 8V to 12V. –. 3.0. 50.0. VI = 7.3V to 20V. –. 5.0. 50.0. VI = 8V to 12V. –. 1.5. 25.0. TJ = +25°C, IO = 5mA to 1.5A. –. 9.0. 100. IO = 5mA to 1A. –. 9.0. 100. IO = 250mA to 750mA. –. 4.0. 50.0. TJ = +25°C (19). Regload Load Regulation. mV. mV. IQ. Quiescent Current. TJ = +25°C. –. 5.0. 6.0. mA. ∆IQ. Quiescent Current Change. IO = 5mA to 1A. –. –. 0.5. mA. VI = 8V to 25V, IO = 500mA. –. –. 0.8. VI = 7.5V to 20V, TJ = +25°C. –. –. 0.8. IO = 5mA. –. -0.8. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 10.0. –. µV/VO. f = 120Hz, IO = 500mA, VI = 8V to 18V. –. 68.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 17.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. ∆VO/∆T VN RR VDROP. Output Voltage. Drift(20). Output Noise Voltage Ripple. Rejection(20). Dropout Voltage Resistance(20). rO. Output. ISC. Short Circuit Current. IPK. Peak. Current(20). Notes: 19. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 20. These parameters, although guaranteed, are not 100% tested in production.. 12 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7805A) (Continued) Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 10V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified..

(49) Symbol VO. Regline. Regload. IQ ∆IQ. ∆VO/∆T VN RR VDROP. Parameter Output Voltage. Line Regulation(21). (21). Load Regulation. Quiescent Current. Min.. Typ.. Max.. Unit. TJ = +25°C. 5.58. 6.0. 6.12. V. IO = 5mA to 1A, PO ≤ 15W, VI = 8.6V to 21V. 5.76. 6.0. 6.24. VI = 8.6V to 25V, IO = 500mA. –. 5.0. 60.0. VI = 9V to 13V. –. 3.0. 60.0. TJ = +25°C. VI = 8.3V to 21V. –. 5.0. 60.0. VI = 9V to 13V. –. 1.5. 30.0. TJ = +25°C, IO = 5mA to 1.5A. –. 9.0. 100. IO = 5mA to 1A. –. 9.0. 100. IO = 250mA to 750mA. –. 5.0. 50.0. TJ = +25°C. –. 4.3. 6.0. mA. –. –. 0.5. mA. VI = 19V to 25V, IO = 500mA. –. –. 0.8. VI = 8.5V to 21V, TJ = +25°C. –. –. 0.8. IO = 5mA. –. -0.8. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 10.0. –. µV/VO. f = 120Hz, IO = 500mA, VI = 9V to 19V. –. 65.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 17.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. Quiescent Current Change IO = 5mA to 1A. Output Voltage. Drift(22). Output Noise Voltage Ripple. Rejection(22). Dropout Voltage Resistance(22). rO. Output. ISC. Short Circuit Current. IPK. Conditions. Peak. Current(22). mV. mV. Notes: 21. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 22. These parameters, although guaranteed, are not 100% tested in production.. 13 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7806A) (Continued) Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 11V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified..

(50) Symbol VO. Regline. Regload. IQ ∆IQ. ∆VO/∆T VN RR VDROP. Parameter Output Voltage. Line Regulation(23). (23). Load Regulation. Quiescent Current. Min.. Typ.. Max.. Unit. TJ = +25°C. 7.84. 8.0. 8.16. V. IO = 5mA to 1A, PO ≤ 15W, VI = 10.6V to 23V. 7.7. 8.0. 8.3. VI = 10.6V to 25V, IO = 500mA. –. 6.0. 80.0. VI = 11V to 17V. –. 3.0. 80.0. TJ = +25°C. VI = 10.4V to 23V. –. 6.0. 80.0. VI = 11V to 17V. –. 2.0. 40.0. TJ = +25°C, IO = 5mA to 1.5A. –. 12.0. 100. IO = 5mA to 1A. –. 12.0. 100. IO = 250mA to 750mA. –. 5.0. 50.0. TJ = +25°C. –. 5.0. 6.0. mA. –. –. 0.5. mA. VI = 11V to 25V, IO = 500mA. –. –. 0.8. VI = 10.6V to 23V, TJ = +25°C. –. –. 0.8. IO = 5mA. –. -0.8. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 10.0. –. µV/VO. f = 120Hz, IO = 500mA, VI = 11.5V to 21.5V. –. 62.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 18.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. Quiescent Current Change IO = 5mA to 1A. Output Voltage. Drift(24). Output Noise Voltage Ripple. Rejection(24). Dropout Voltage Resistance(24). rO. Output. ISC. Short Circuit Current. IPK. Conditions. Peak. Current(24). mV. mV. Notes: 23. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 24. These parameters, although guaranteed, are not 100% tested in production.. 14 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7808A) (Continued) Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 14V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified..

(51) Symbol. Min.. Typ.. Max.. Units. TJ = +25°C. 8.82. 9.0. 9.16. V. IO = 5mA to 1A, PO ≤ 15W, VI = 11.2V to 24V. 8.65. 9.0. 9.35. VI = 11.7V to 25V, IO = 500mA. –. 6.0. 90.0. VI = 12.5V to 19V. –. 4.0. 45.0. TJ = +25°C. VI = 11.5V to 24V. –. 6.0. 90.0. VI = 12.5V to 19V. –. 2.0. 45.0. TJ = +25°C, IO = 5mA to 1.5A. –. 12.0. 100. IO = 5mA to 1A. –. 12.0. 100. IO = 250mA to 750mA. –. 5.0. 50.0. TJ = +25°C. –. 5.0. 6.0. mA. –. –. 0.5. mA. VI = 12V to 25V, IO = 500mA. –. –. 0.8. VI = 11.7V to 25V, TJ = +25°C. –. –. 0.8. Output Voltage Drift(26). IO = 5mA. –. -1.0. –. mV/°C. VN. Output Noise Voltage. f = 10Hz to 100kHz, TA = +25°C. –. 10.0. –. µV/VO. RR. Ripple Rejection(26). f = 120Hz, IO = 500mA, VI = 12V to 22V. –. 62.0. –. dB. Dropout Voltage. IO = 1A, TJ = +25°C. –. 2.0. –. V. rO. Output Resistance(26). f = 1kHz. –. 17.0. –. mΩ. ISC. Short Circuit Current. VI = 35V, TA = +25°C. –. 250. –. mA. IPK. Peak Current(26). TJ = +25°C. –. 2.2. –. A. VO. Regline. Regload. IQ ∆IQ. ∆VO/∆T. VDROP. Parameter Output Voltage. Line Regulation(25). Load. Regulation(25). Quiescent Current. Conditions. Quiescent Current Change IO = 5mA to 1A. mV. mV. Notes: 25. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 26. These parameters, although guaranteed, are not 100% tested in production.. 15 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7809A) (Continued) Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 15V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified..

(52) Symbol VO. Regline. Parameter Output Voltage. Line Regulation(27). Conditions. Min.. Typ.. Max.. Units. TJ = +25°C. 9.8. 10.0. 10.2. V. IO = 5mA to 1A, PO ≤ 15W, VI = 12.8V to 25V. 9.6. 10.0. 10.4. VI = 12.8V to 26V, IO = 500mA. –. 8.0. 100. VI = 13V to 20V. –. 4.0. 50.0. VI = 12.5V to 25V. –. 8.0. 100. VI = 13V to 20V. –. 3.0. 50.0. TJ = +25°C, IO = 5mA to 1.5A. –. 12.0. 100. IO = 5mA to 1A. –. 12.0. 100. IO = 250mA to 750mA. –. 5.0. 50.0. TJ = +25°C Regload. (27). Load Regulation. mV. mV. IQ. Quiescent Current. TJ = +25°C. –. 5.0. 6.0. mA. ∆IQ. Quiescent Current Change. IO = 5mA to 1A. –. –. 0.5. mA. VI = 12.8V to 25V, IO = 500mA. –. –. 0.8. VI = 13V to 26V, TJ = +25°C. –. –. 0.5. IO = 5mA. –. -1.0. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 10.0. –. µV/VO. f = 120Hz, IO = 500mA, VI = 14V to 24V. –. 62.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 17.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. ∆VO/∆T VN RR VDROP. Output Voltage. Drift(28). Output Noise Voltage Ripple. Rejection(28). Dropout Voltage Resistance(28). rO. Output. ISC. Short Circuit Current. IPK. Peak. Current(28). Notes: 27. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 28. These parameters, although guaranteed, are not 100% tested in production.. 16 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7810A) (Continued) Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 16V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified..

(53) Symbol VO. Regline. Regload. IQ ∆IQ. ∆VO/∆T VN RR VDROP. Parameter Output Voltage. Line Regulation(29). (29). Load Regulation. Quiescent Current. Min.. Typ.. Max.. Units. TJ = +25°C. 11.75. 12.0. 12.25. V. IO = 5mA to 1A, PO ≤ 15W, VI = 14.8V to 27V. 11.5. 12.0. 12.5. VI = 14.8V to 30V, IO = 500mA. –. 10.0. 120. VI = 16V to 22V. –. 4.0. 120. TJ = +25°C. VI = 14.5V to 27V. –. 10.0. 120. VI = 16V to 22V. –. 3.0. 60.0. TJ = +25°C, IO = 5mA to 1.5A. –. 12.0. 100. IO = 5mA to 1A. –. 12.0. 100. IO = 250mA to 750mA. –. 5.0. 50.0. TJ = +25°C. –. 5.1. 6.0. mA. –. –. 0.5. mA. VI = 14V to 27V, IO = 500mA. –. –. 0.8. VI = 15V to 30V, TJ = +25°C. –. –. 0.8. IO = 5mA. –. -1.0. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 10.0. –. µV/VO. f = 120Hz, IO = 500mA, VI = 14V to 24V. –. 60.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 18.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. Quiescent Current Change IO = 5mA to 1A. Output Voltage. Drift(30). Output Noise Voltage Ripple. Rejection(30). Dropout Voltage Resistance(30). rO. Output. ISC. Short Circuit Current. IPK. Conditions. Peak. Current(30). mV. mV. Note: 29. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 30. These parameters, although guaranteed, are not 100% tested in production.. 17 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7812A) (Continued) Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 19V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified..

(54) Symbol VO. Regline. Regload. IQ ∆IQ. ∆VO/∆T VN RR VDROP. Parameter Output Voltage. Line Regulation(31). (31). Load Regulation. Quiescent Current. Min.. Typ.. Max.. Units. TJ = +25°C. 14.75. 15.0. 15.3. V. IO = 5mA to 1A, PO ≤ 15W, VI = 17.7V to 30V. 14.4. 15.0. 15.6. VI = 17.4V to 30V, IO = 500mA. –. 10.0. 150. VI = 20V to 26V. –. 5.0. 150. TJ = +25°C VI = 17.5V to 30V. –. 11.0. 150. VI = 20V to 26V. –. 3.0. 75.0. TJ = +25°C, IO = 5mA to 1.5A. –. 12.0. 100. IO = 5mA to 1A. –. 12.0. 100. IO = 250mA to 750mA. –. 5.0. 50.0. TJ = +25°C. –. 5.2. 6.0. mA. –. –. 0.5. mA. VI = 17.5V to 30V, IO = 500mA. –. –. 0.8. VI = 17.5V to 30V, TJ = +25°C. –. –. 0.8. IO = 5mA. –. -1.0. –. mV/°C. f = 10Hz to 100kHz, TA = +25°C. –. 10.0. –. µV/VO. f = 120Hz, IO = 500mA, VI = 18.5V to 28.5V. –. 58.0. –. dB. IO = 1A, TJ = +25°C. –. 2.0. –. V. f = 1kHz. –. 19.0. –. mΩ. VI = 35V, TA = +25°C. –. 250. –. mA. TJ = +25°C. –. 2.2. –. A. Quiescent Current Change IO = 5mA to 1A. Output Voltage. Drift(32). Output Noise Voltage Ripple. Rejection(32). Dropout Voltage Resistance(32). rO. Output. ISC. Short Circuit Current. IPK. Conditions. Peak. Current(32). mV. mV. Notes: 31. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 32. These parameters, although guaranteed, are not 100% tested in production.. 18 LM78XX/LM78XXA Rev. 1.0. www.fairchildsemi.com. LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator. Electrical Characteristics (LM7815A) (Continued) Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 23V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified..